XP0121600L Allicdata Electronics

XP0121600L Discrete Semiconductor Products

Allicdata Part #:

XP0121600LTR-ND

Manufacturer Part#:

XP0121600L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS 2NPN PREBIAS 0.15W SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: XP0121600L datasheetXP0121600L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1
Description

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AXP0121600L is a multifunctional type of transistor array. It is designed specially to operate in many applications, including amplifiers and switching. In addition, it is an ideal choice for many applications particularly in the automotive and aerospace industries.

This pre-biased transistor array consists of primarily two sections. These sections are the pre-biased output transistor and the pre-biased control transistor. The pre-biased output transistor is responsible for providing the amplifier with a linear operating area and a high power output. The pre-biased control transistor controls the operation of the output stages, providing the necessary level of dynamic control over the output stage. The pre-biased output transistor provides the power for the amplifier and is rated for output power of up to 50 Watts.

The AXP0121600L is designed with advanced technologies and features such as internal temperature sensors and current limiting circuitry. This feature helps to reduce the risk of thermal runaway, ensuring that the device operates at optimal levels. The device also features an adjustable current limit and a wide operating frequency range, enabling it to operate across a variety of applications. Additionally, the high-power output of the device makes it well suited for use in large amplifier systems.

The working principle of AXP0121600L is based on the use of the pre-biased output and control transistors. Both the output and control transistors are connected together, forming a current mirror. The voltage setting for the output and control transistors is adjusted using the current source, and the resulting output voltage is proportional to the applied input voltage. This output voltage is then used to modulate the output power. This is accomplished by adjusting the voltage of the output and control transistors, and thereby controlling the magnitude of the output power.

In order to further improve the performance of the AXP0121600L, the pre-biased output and control transistors are designed to be capable of operating over a wide range of frequencies. This means that the device can be used in a wide range of applications, such as audio, video and RF amplifiers. Additionally, the device is designed to use a low noise input stage, meaning that it can be used in dedicated audio systems, reducing the risk of noise pollution.

The AXP0121600L transistor array is a versatile integrated circuit solution for devices that require a wide range of input frequencies, a low noise input stage, and high power output. With its advanced technologies and features, the device is well-suited for use in a variety of applications, including amplifiers and switching. Additionally, its use of the pre-biased output and control transistors allows for precise control of the output power.

The specific data is subject to PDF, and the above content is for reference

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