XP0111300L Allicdata Electronics

XP0111300L Discrete Semiconductor Products

Allicdata Part #:

XP0111300LTR-ND

Manufacturer Part#:

XP0111300L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: XP0111300L datasheetXP0111300L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1
Description

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The XP0111300L is a type of pre-biased array transistor and it is typically used in applications where more than just one transistor is needed. This type of transistor array allows for switching and amplification of a circuit. In terms of its applications, the XP0111300L is widely used in audio, automotive, and consumer applications.

The XP0111300L is a NPN type transistor device, meaning it has a negative-positive-negative semiconductor structure. This structure allows for the device to be used in a wide variety of applications including switching and amplification. The device has a base-emitter breakdown voltage of 100 volts, and a collector-to-emitter-saturation voltage of 0.4 volts.

The working principle of the XP0111300L involves the flow of electrons. This is because transistors are composed of three layers of semiconductor material, each layer allowing for the flow of electrons in a certain direction. The emitter and collector of the transistor act as the terminals of the device, while the base is connected to a control voltage. When the control voltage is increased, the transistor can increase the amount of current flowing through it. This increases the voltage at the collector and decreases the voltage at the emitter.

The XP0111300L is a pre-biased array transistor, meaning that the control voltage applied to the base of the transistor is pre-set and not variable. This allows for the transistor to be used in applications where the same amount of current flow from the collector to the emitter is needed. Pre-biased transistors are commonly used in audio applications, such as amplifiers and sound mixing boards.

In conclusion, the XP0111300L is a type of pre-biased array transistor and is widely used in audio, automotive, and consumer applications for its flexibility and high performance. The device works on the principle of electron flow, with the base-emitter breakdown voltage being 100 volts and the collector-to-emitter-saturation voltage being 0.4 volts.

The specific data is subject to PDF, and the above content is for reference

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