XP0111F00L Allicdata Electronics

XP0111F00L Discrete Semiconductor Products

Allicdata Part #:

XP0111F00LTR-ND

Manufacturer Part#:

XP0111F00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: XP0111F00L datasheetXP0111F00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1
Description

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A XP0111F00L application field and working principle is a type of transistor that is commonly used in a wide range of applications. It is known as a bipolar junction transistor, or BJT, and one of its main advantages is that it is pre-biased, meaning that the electrical junction between the base, collector and emitter is already set up and therefore does not require any external biasing components. This type of transistor array is capable of providing higher breakdown voltage ratings than regular BJTs and is capable of dealing with high levels of current, making it an ideal choice for many applications from power supplies to integrated circuits.

The working principle of a XP0111F00L is based on the basic BJT structure. The BJT itself consists of three junctions, two of which are the base-emitter junction and the base-collector junction. When voltage is applied to the base junction, electrons are released from it, which then flow through the emitter-base junction and then on to the collector junction. This is known as minority carrier injection, and as the current passes through the collector junction, it is amplified. This type of transistor is known as an NPN type due to the flow of electrons being from the emitter to the collector.

A XP0111F00L is often used in general purpose applications, where it is used as an amplifier, voltage regulator, and oscillator. It is also used in low frequency power supplies, switch-mode converters, and even in audio processing applications. Due to its pre-biased feature, it is also heavily used in digital circuits, where it is used to provide power to logic gates, transistors and other current devices. This type of transistor is also often used for low-level audio applications, where its higher breakdown voltage rating and higher current handling capabilities are advantageous.

The XP0111F00L can also be used for other applications including light sensing, temperature sensing, and high frequency switching. It is also used in RF RF (Radio Frequency) amplifiers, where it is used to amplify the signal from the transmitter. Additionally, it can be used in motor drive circuits, given its ability to handle higher current ratings.

As with any other type of transistor, it is recommended that the appropriate operating temperature range is adhered to, in order to ensure optimal performance. Operating the XP0111F00L at temperatures above or below the specified range could potentially cause permanent damage to the transistor. Also ensure that its corresponding power rating is not exceeded, as this could lead to its failure. Additionally, the current and voltage ratings of the device should always be taken into account.

Overall, the XP0111F00L is a versatile and reliable transistor array, which can be used in a range of applications from power supplies to digital circuits. Given its pre-biased build, it is suitable for applications that require no separate biasing components, and due to its high breakdown voltage and current ratings, it is well suited for tasks where power needs to be regulated or amplified. Its versatility and reliability make it an ideal choice for many designers looking for an array of transistors.

The specific data is subject to PDF, and the above content is for reference

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