XP0121E00L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:	SMini5-G1

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Introduction

The XP0121E00L is a pre-biased array of bipolar transistors (BJT) that is used in a wide range of applications. This devices consists of 8 NPN transistors that share a common emitter node and the base pins of each device are pre-biased to regulated currents. This device is useful in providing an integrated devices solution in high current switching, analog and digital applications. It features low power losses in on-state and exhibits low EMI due to its low on-state current.

Application Fields of XP0121E00L

The XP0121E00L has a wide range of applications. It is used in switching and power control, high current amplifier circuits, power supplies, pulse power and high current switches, motor control and low level signal amplification. The device is also used in audio-video systems, cellular phones, optical and magneto-optical memories, wireless system, LANs and WANs.

Working Principle of XP0121E00L

The working principle of the XP0121E00L is simple. Each of the 8 NPN transistors is connected in parallel, with the emitter pins of all the transistors connected to a common emitter point. The base pins of each transistor are pre-biased to regulated currents. As a result, when current is supplied to the emitter, the base pins of each transistor will be pre-biased at the required current. This allows the device to switch quickly and accurately between high and low states.The XP0121E00L can handle higher current and provide greater switching capacity than single NPN transistors. This is due to the effect of the pre-biased currents. The pre-biased currents ensure that the transistors can rapidly and accurately switch between high and low states. Moreover, the XP0121E00L exhibits better power efficiency as compared to a single NPN transistor. This is because the low on-state current in each of the transistors reduces power losses in on-state and also helps reduce electromagnetic interference (EMI) from the device. In addition, the device is also integrated with a built-in thermal protection circuit that ensures that the device shuts off if the temperature rises above the rated threshold.

Conclusion

The XP0121E00L is a pre-biased array of bipolar transistors that provides a useful integrated devices solution in a wide range of applications. It features low power losses in on-state and exhibits low EMI due to its low on-state current. The device is suitable for applications such as switching and power control, high current amplifier circuits, power supplies, pulse power and high current switches, motor control and low level signal amplification. It also features a built-in thermal protection circuit that helps protect the device against overheating.

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