XP0111200L Allicdata Electronics

XP0111200L Discrete Semiconductor Products

Allicdata Part #:

XP0111200LTR-ND

Manufacturer Part#:

XP0111200L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: XP0111200L datasheetXP0111200L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1
Description

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The XP0111200L is a pre-biased array of bipolar junction transistors (BJTs). It is typically used in applications in which a large number of BJTs is required, such as power conversion and switching. The XP0111200L is an integrated circuit which consists of an array of npn and pnp transistors in a single package. Each stage contains an npn and a pnp transistor and a resistor. The transistors are pre-biased with a collector-emitter voltage of 12 volts. This low voltage makes the transistor array suitable for use in low-voltage applications such as motor controls, lighting controls and digital integrated circuit (IC) applications.

The XP0111200L is designed to provide two complementary paths to the load. In the primary path, the npn transistor is biased in the forward-active mode. This allows it to operate as a switch, turning on and off as needed to provide current to the load. In the secondary path, the pnp transistor is biased in reverse-active mode, providing a complementary path for the current to flow. This allows the XP0111200L to provide a current source, with both npn and pnp transistors providing the current to the load.

The XP0111200L uses a couple of techniques for controlling the current flow through the array. First, the resistor feedback network is used to control the bias point of the transistors. By adjusting the resistance between the collector and emitter of the transistor, the operating point (voltage and current) can be adjusted. Second, the transistors can be overdriven to increase the current flow. This is done by increasing the voltage on the collector of the transistor, which causes more current to flow through the transistor.

The XP0111200L is also designed to provide protection against short circuit. The transistor array has an internal current limit which prevents excessive current from flowing through the device. This ensures that the IC is not damaged or destroyed by a short circuit. The array also includes a thermal protection circuit which shuts down the device when it is exposed to higher-than-normal temperatures.

Other features of the XP0111200L include a reverse polarity protection circuit which prevents the device from being damaged if a negative voltage is applied to the input terminals. The array also includes a power-on reset circuit which ensures that the IC is in a known state when it is first energized.

The XP0111200L is a versatile and reliable array of bipolar transistors which is ideal for a wide range of applications. It is an easy-to-use pre-biased array which can be used in low-voltage applications. Its features make it an excellent choice for use in motor controls, lighting controls, digital ICs and other applications in which a large number of transistors are required.

The specific data is subject to PDF, and the above content is for reference

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