| Allicdata Part #: | ZTX549STOB-ND |
| Manufacturer Part#: |
ZTX549STOB |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TRANS PNP 30V 1A E-LINE |
| More Detail: | Bipolar (BJT) Transistor PNP 30V 1A 100MHz 1W Thro... |
| DataSheet: |  ZTX549STOB Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Vce Saturation (Max) @ Ib, Ic: | 750mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -55°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | E-Line-3, Formed Leads |
| Supplier Device Package: | E-Line (TO-92 compatible) |
| Base Part Number: | ZTX549 |
Description
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The ZTX549STOB transistor is a NPN type Small Signal Bipolar Transistor (BJT) from STMicroelectronics. It comes in a small and low cost TO-92 package which makes it a popular choice for many applications. The transistor can handle up to 500 mA of collector current and is capable of supplying up to 45V of reverse voltage. It also features an excellent hFE which makes it suitable for many switching and amplification applications.The ZTX549STOB is mainly used in applications such as audio amplifiers, switching circuits and timers. It can also be used in the output stage of power amplifiers, power supplies, regulators and audio amplifiers. It is also suitable for applications that require high switching speeds such as frequency and pulse modulators.The ZTX549STOB has a maximum collector-emitter voltage of 80V, a maximum collector-base voltage of 80V and a maximum emitter-base voltage of 5V. The maximum collector current for this transistor is 500mA and the maximum power dissipation is 1.5W. The hFE of this transistor ranges from 60 to 200 and the transition frequency is typically 300MHz.The working principle behind the ZTX549STOB transistor is based on the operation of PN junctions. The ZTX549STOB is formed by two PN junctions connected in series, where each junction is formed by three layers of different materials. These layers are the base, an N-type silicon material; the collector, a P-type silicon material; and the emitter, an N-type silicon material.When a voltage is applied to the base-emitter junction of the transistor, the current flowing through the junction depends on the base voltage. This current is called the base current and it is small compared to the collector current. When the base current is sufficient to flow through both junctions, the junction between the collector and the base is turned into an ON condition and a current can flow through the collector-emitter junction. The current flowing through this junction is called the collector current, which is much higher than the base current.The hFE of this transistor is the ratio of the collector current to the base current. This ratio can vary depending on the base voltage, the collector current and the temperature. At a given base voltage, a higher hFE indicates a stronger current amplification factor which means that the transistor can switch and amplify higher currents.In conclusion, the ZTX549STOB is a very popular NPN type small signal bipolar transistor used in many audio and power amplification and switching applications. It is well suited for a wide variety of applications due to its excellent hFE, good transition frequency, and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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