ZTX557STZ Allicdata Electronics
Allicdata Part #:

ZTX557STZ-ND

Manufacturer Part#:

ZTX557STZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 300V 0.5A E-LINE
More Detail: Bipolar (BJT) Transistor PNP 300V 500mA 75MHz 1W T...
DataSheet: ZTX557STZ datasheetZTX557STZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX557
Description

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Bipolar Junction Transistors (BJT) are three-terminal active devices constructed from three doped semiconductor materials, typically referred to as the collector, base, and emitter. BJTs come in two main types, NPN and PNP, and each type utilizes the polarization charge of the junctions between the three layers of semiconductor material to control current flow. One of the most common BJTs is the ZTX557STZ, which is a single type.

The ZTX557STZ transistor is designed for a wide range of applications, including switching, amplification and signal handling. It is most commonly used as an interface between digital and analog components, as well as a basic switch to control devices such as lights and motors. The ZTX557STZ can also be used in frequency and oscillatory circuits, and in devices that require high-speed switching.

The ZTX557STZ is constructed from a layer of N-type semiconductor material and a layer of P-type semiconductor material, which are then connected by a third layer of semiconductor material that serves as the base. The layers are formed into the shape of a transistor, with one end of the transistor acting as the collector, the other end acting as the emitter, and the base located between the two. The current flow between the collector and emitter is controlled by the base layer.

When a current is sent through the base, the two Polarization Charges at the junction of the N-type and P-type materials are attracted towards one another. This creates a depletion region in the base, which increases the resistance between the collector and emitter. As a result, less current is allowed to flow through the collector-emitter junction.

Conversely, when no current is sent through the base, the Polarization Charges are pushed away from one another, causing the depletion region in the base to decrease and allowing more current to flow between the collector and emitter. This action is what allows the ZTX557STZ to be used as an amplifier or a switch, depending on the amount of current sent to the base.

In summary, the ZTX557STZ is a single type of Bipolar Junction Transistor (BJT) that is commonly used for switching, amplification, and signal handling in a wide range of applications. Its versatile design allows it to be used as an amplifier or a switch, depending on the amount of current sent to the base. It can be used in both digital and analog circuits, and is an effective interface between the two.

The specific data is subject to PDF, and the above content is for reference

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