ZTX558STOA Allicdata Electronics
Allicdata Part #:

ZTX558STOA-ND

Manufacturer Part#:

ZTX558STOA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 400V 0.2A E-LINE
More Detail: Bipolar (BJT) Transistor PNP 400V 200mA 50MHz 1W T...
DataSheet: ZTX558STOA datasheetZTX558STOA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX558
Description

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ZTX558STOA is a single, bipolar junction transistor (BJT) which is widely used in an array of applications. It is widely applicable to a broad range of fields such as instrumentation, receivers, amplifiers and oscillators. ZTX558STOA transistors are used in the manufacture of auto-switching circuits, switching regulators, and other processes which require high speed switching in addition to low noise characteristics.

ZTX558STOA is a NPN type transistor. It is specifically designed to switch high frequency signals, making it an ideal choice for a broad range of high frequency applications. It is most commonly found in the form of a metal-oxide-semiconductor field-effect (MOSFET) transistor. This allows ZTX558STOA to control large-signal currents and voltages.

The ZTX558STOA has a maximum collector current (IC) rating of 0.5A and a maximum voltage rating of 30V. It has an excellent breakdown voltage (BVCEO) of 70V and a high power rating. The power gain of the device ranges from 10 to 75, and it has a low-noise property.

The ZTX558STOA’s working principle is grounded on the following general operation for transistors: current at the base must be in a certain value to allow the flow of current in the emitter-collector circuit. This working principle exploits the fact that the base current controls the emitter-collector current, making the device an ideal choice for applications such as current amplification.

The ZTX558STOA is especially suitable for oscillator-memory applications, as well as high-frequency switching and amplifier circuits. Oscillator-memory applications convert AC signals to DC signals, making oscillator circuit designs possible. The ZTX558STOA is well suited for switching circuits with compatible pin spacing and high-speed applications.

In addition, ZTX558STOA also exhibits superior noise immunity, allowing for complete suppression of incidental high-frequency noise generated in digital systems. The device has a low-noise property and is suitable for amplifying low-level signals with its high-pulse input characteristics.

The ZTX558STOA further performs well in its general operations in amplifier circuits, especially those incorporating the feedback mechanism. It supports high-frequency switching which is required in the operation of electronic calculators, payphones, and a variety of industrial control systems. The ZTX558STOA\'s robust breakdown voltage enables current amplification when the device is in full active mode.

In conclusion, the ZTX558STOA is a single, bipolar junction transistor (BJT) with a range of features. Its high breakdown voltage and low noise property make it an ideal choice for a broad range of applications such as amplifiers, oscillators, receivers, and memory applications. In addition, it has excellent switching characteristics for high-frequency switching, enabling digital system operation with complete noise suppression.

The specific data is subject to PDF, and the above content is for reference

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