ZTX557STOB

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The ZTX557STOB is a single discret bipolar (BJT) transistor, ideal for general purpose switching and amplifier applications. Its high frequency, current gain and hFE linearity make it an ideal choice when a discrete solution is needed. It is designed to provide high gain and low noise operation at elevated temperatures.

Physical Description: The ZTX557STOB is an NPN type of transistor, with a NPN-N-N package configuration. The component measures 1.5 mm by 4.7 mm, and weighs 7.4 mg. It features a minimum current gain of 20, a maximum collector-emitter voltage of 40V, and a maximum collector-base voltage of 40V.

Applications: The ZTX557STOB is commonly used in general purpose switching applications. Its high gain and linear hFE makes it an ideal choice when a discrete solution is required. It is also a desirable choice for amplifier applications, as its low noise and robust construction enable high-fidelity amplification.

Working Principle: The ZTX557STOB operates on the principle of the bipolar junction transistor. Electrons and holes are injected on either side of a PN junction by applying a bias voltage. This, combined with a control current, allows for current flow between the collector and emitter regions of the transistor. This transistor features high breakdown voltage, which ensure reliable operation even at high output voltages.

Electrical Characteristics: The ZTX557STOB features a high current gain, with a minimum of 20. The maximum collector-emitter voltage is 40V, while the maximum collector-base voltage is 40V. Additionally, this component is designed to provide high frequency, high hFE linearity, and low noise at elevated temperatures.

Conclusion: The ZTX557STOB is a single discret transistor, ideal for general-purpose switching and amplifier applications. Its high current gain and linear hFE makes it an ideal choice when a discrete solution is required. Additionally, it provides low noise at elevated temperatures, making it a desirable choice for amplifier applications.

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