ZTX557STOA Allicdata Electronics
Allicdata Part #:

ZTX557STOA-ND

Manufacturer Part#:

ZTX557STOA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 300V 0.5A E-LINE
More Detail: Bipolar (BJT) Transistor PNP 300V 500mA 75MHz 1W T...
DataSheet: ZTX557STOA datasheetZTX557STOA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX557
Description

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The ZTX557STOA is a general-purpose, low power, two-stage NPN transistor. It is a high-performance device designed to offer excellent switching performance and be easy to implement. This makes the ZTX557STOA ideal for a wide range of applications such as general-purpose switching, switching amplifiers, low power circuit switching, signal conditioning and RF signal processing. It is also suitable for a wide range of signal-level power-handling applications.

The ZTX557STOA is a bipolar transistor, also known as a BJT (Bipolar Junction Transistor). It is a single transistor, meaning that it contains only one base, one collector, and one emitter. It is a current-controlled device, meaning that the current going into the base will control the amount of current flowing through the device.

The ZTX557STOA has two stages, an NPN transistor and an emitter-base resistor. The NPN transistor has two junctions, the base-emitter junction and the base-collector junction. The base-emitter junction forms a diode, while the base-collector junction forms a resistor, allowing the current flowing through the device to be controlled by the voltage applied to the base-emitter junction.

The NPN transistor acts as a switch, allowing the current to flow through the device when the base is at a higher voltage than the emitter, and blocking the current when the base is at a lower voltage than the emitter. When the base-emitter voltage is close to 0V, there is no current flowing through the transistor, and the device is in its off state. When the base-emitter voltage is higher than 0V, the current flowing through the device increases linearly, and the device is in its on state.

The emitter-base resistor controls the current flow through the device by changing the voltage drop across the emitter-base junction. This effect is called emitter-base resistance, and is measured in ohms. The higher the emitter-base resistance, the higher the current flowing through the device and the lower the voltage drop across the emitter-base junction.

The ZTX557STOA is a versatile device and is suitable for a wide range of applications. It is an ideal choice for switching amplifiers, low power circuit switching, RF signal processing, signal conditioning and other applications requiring low power and excellent switching performance. The device is also very easy to use and can be quickly implemented in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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