ZTX553STZ Allicdata Electronics
Allicdata Part #:

ZTX553STZ-ND

Manufacturer Part#:

ZTX553STZ

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 100V 1A E-LINE
More Detail: Bipolar (BJT) Transistor PNP 100V 1A 150MHz 1W Thr...
DataSheet: ZTX553STZ datasheetZTX553STZ Datasheet/PDF
Quantity: 1000
2000 +: $ 0.16078
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX553
Description

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Bipolar junction transistors (BJTs) are one of the oldest and most commonly used transistors today. They are widely used in consumer electronics, power supplies, and amplifiers for their robustness, high speed switching, and low power consumption. The ZTX553STZ is a single BJT specifically designed for use in application fields such as mobile communications, electronics measuring equipment, and consumer electronics. It is an NPN type transistor, which means that its two leads (base and emitter) are separated by an N-type semiconductor layer, and its third lead (collector) is separated by a P-type semiconductor layer. This allows the transistor to act as both an amplifier and a switch.

The ZTX553STZ is rated at 100mA, which is suitable for small signal applications such as radio receivers, amplifiers, and input circuits. It is also rated at 20V, which allows it to handle higher voltages without damage. Furthermore, it has a low saturation voltage and a low collector-to-emitter voltage of only 0.5V. The other electrical specifications of the ZTX553STZ include: a breakdown voltage of 35V, a power dissipation of 250mW, and a gain of 130.

The working principle of the ZTX553STZ is based on the fact that when a small voltage is applied between its base and emitter terminals, a large current can flow from its collector to its emitter. This current flow is regulated by the amount of voltage applied between the base and emitter terminals. The greater the voltage, the higher the current flow. This current flow is referred to as "beta" and is the "gain" of the transistor. The ZTX553STZ transistor works by regulating the amount of current flowing through it by adjusting the voltage applied between its base and emitter terminals.

The ZTX553STZ can be used in a variety of applications, such as audio amplifiers, radio receivers, reverse battery protection circuits, and switching circuits. Its low power consumption and high switching speed make it an ideal choice for these applications. In addition, the ZTX553STZ has a wide operating temperature range and is capable of operating over a temperature range of -60 degrees Celsius to +150 degrees Celsius. This allows it to be used in extreme temperature environments.

In summary, the ZTX553STZ is a great choice for many applications, and provides excellent performance at a reasonable price. Its low power consumption, high speed switching, and low saturation voltage make it a versatile and reliable transistor. The ZTX553STZ has a wide operating temperature range and can be used in extreme temperature environments.

The specific data is subject to PDF, and the above content is for reference

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