Allicdata Part #: | ZTX603STOB-ND |
Manufacturer Part#: |
ZTX603STOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN DARL 80V 1A E-LINE |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 1A 1... |
DataSheet: | ZTX603STOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 1mA, 1A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 1A, 5V |
Power - Max: | 1W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | E-Line-3, Formed Leads |
Supplier Device Package: | E-Line (TO-92 compatible) |
Base Part Number: | ZTX603 |
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ZTX603STOB belong to the classification of transistors - bipolar (BJT) - single. It is a commonly used transistor in the electronics industry and is used in many applications. To ensure that the transistor works properly and efficiently, it is important to understand its working principle. In this article, the application field and working principle of the ZTX603STOB will be discussed in detail.
The ZTX603STOB polarised PNP transistor is a general-purpose device designed for use in medium-powered applications. It is capable of handling currents up to 2A and has a maximum collector-to-emitter voltage of 30V. The low transition frequency of the ZTX603STOB (20MHz) makes it ideal for low-frequency electronics such as audio power amplifiers and motor speed controllers. The device features a high DC current gain (hFE) range, typically between 50~300, giving it high switching speed and low power dissipation.
The other notable features of the ZTX603STOB include its high transition frequency (fT), which is typically between 35~75MHz, making it ideal for RF applications such as RF transmitters and receivers. The device also has a low collector-to-base capacitance of 35pF, giving it a wide frequency range when used at high frequencies. The ZTX603STOB also features a low collector-to-emitter saturation voltage of 0.15V, making it suitable for low-voltage applications.
In order for a transistor to work properly, certain conditions must be met. In the case of a PNP bipolar transistor, the collector must be more positive than the base and the emitter must be more negative than the base. This condition is known as forward-biased biasing. If these conditions are not met, the transistor will not turn on and will become an open switch. Once the biasing conditions are met and the current begins to flow, the wattage is limited by the collector-emitter voltage and the collector current.
The working principle of the ZTX603STOB is similar to that of other types of transistors. When current flows into the base connection, it acts as a gate to control the current flow between the collector and emitter of the transistor. This is known as the "on" state of the transistor. The size of the current flowing between the collector and emitter is determined by the base current and the gain, known as the current gain (hFE), of the transistor. As the base current increases, more current will flow between the collector and emitter, resulting in an increase in the wattage. Conversely, if the base current is reduced, less current will flow between the collector and emitter, resulting in a decrease in the wattage.
The ZTX603STOB is a versatile and reliable transistor that can be used for many applications. It is particularly useful for low-power applications such as audio power amplifiers and RF transmitters, due to its low current gain and high transition frequency. However, due to its low saturation voltage, it is not suitable for high voltage applications. By understanding the working principle of the ZTX603STOB, engineers can better understand its application fields, allowing them to design and build more efficient circuits.
The specific data is subject to PDF, and the above content is for reference
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