ZTX692BSTZ

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	70V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	400 @ 500mA, 2V
Power - Max:	1W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3, Formed Leads
Supplier Device Package:	E-Line (TO-92 compatible)
Base Part Number:	ZTX692B

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Introduction
The ZTX692BSTZ is a medium-power NPN bipolar junction transistor (BJT) from STMicroelectronics. This device can be used in a wide array of applications, and its low-voltage operation and single-stage gain make it very attractive for a number of circuit designs. This article will provide a detailed overview of the ZTX692BSTZ application field and working principle.Basic Design and Features
The ZTX692BSTZ is a low-voltage PNP transistor specifically designed for use in signal-level circuits that require low-voltage operation and limited power dissipation. It is constructed with a pre-biased base-emitter junction and a collector-base junction that allows for lower supply voltages. It is rated for a maximum power dissipation of 200mW and a collector-emitter voltage of 40V.The ZTX692BSTZ is also designed with a built-in protection collector-emitter diode. This helps reduce the risk of damage to the transistor due to reverse-biased voltage, and ensures reliable operation in all applications.Application Field and Uses
The ZTX692BSTZ is primarily designed for use in signal-level circuits, where low-voltage operation and limited power dissipation are required. This makes it well suited for use in slow-switching circuits, such as switches driven by external loads or microcontrollers. It can also be used in applications where low-power Darlington circuits are needed, such as digital logic circuits, where it can provide small power gains.The ZTX692BSTZ is also useful for audio amplifiers, as it can provide a steady signal level with minimal power consumption. It can be used to achieve switching control in audio applications, as well as to provide isolated gain in audio systems.Working Principle
The ZTX692BSTZ is a NPN BJT. Its working principle is based on the diffusion of electrons and holes through the base region of a semiconductor. It is designed with a pre-biased base region, which allows electrons to flow through the base region and holes to be collected at the collector region.The ZTX692BSTZ’s operating principle is based on the fact that the base-collector junction behaves like a diode, allowing current to flow in only one direction. When a voltage is applied to the base of the transistor, current is drawn through the base region, causing electrons to collect at the collector region. The emitter-collector region acts as an amplifier, allowing a small change in current at the base to be amplified at the collector.Conclusion
The ZTX692BSTZ is a versatile low-voltage NPN transistor from STMicroelectronics. It has a built-in protection diode and is suitable for a wide range of signal-level circuits. Its working principle is based on the diffusion of electrons and holes through the base region of a semiconductor, which allows it to provide isolation and small power gains. The ZTX692BSTZ is a very attractive option for a number of circuit designs.

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