Allicdata Part #: | ZTX653STZ-ND |
Manufacturer Part#: |
ZTX653STZ |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 100V 2A E-LINE |
More Detail: | Bipolar (BJT) Transistor NPN 100V 2A 175MHz 1W Thr... |
DataSheet: | ZTX653STZ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.23112 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Power - Max: | 1W |
Frequency - Transition: | 175MHz |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | E-Line-3, Formed Leads |
Supplier Device Package: | E-Line (TO-92 compatible) |
Base Part Number: | ZTX653 |
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Transistors play an essential role in virtually all manner of modern electronics and are widely used for amplifying, switching and frequency control. The type of transistor used is a critical factor in determining the performance and reliability of a given circuit. Bipolar junction transistors (BJT) are the most widely used type of transistor in analog electronic circuit design. Among BJT is the ZTX653STZ, which is a single-channel NPN crystal transistor. It has a power gain of 71 dB and a maximum collector current of 340 mA. This makes it ideal for applications such as low-noise amplifiers and switching circuits.
The ZTX653STZ has a base-emitter diode connected to its base, allowing the collector to be biased above the base voltage. This allows an increase in current gain over a regular (non-diode-coupled) transistor and makes it more suitable for high-precision amplification and switching. The stable gain characteristic of the ZTX653STZ also makes it an excellent choice for high-frequency applications. It also offers high-temperature stability and low noise levels.
Due to its excellent processing characteristics, the ZTX653STZ is often used as output stages for scanners and other imaging applications. It also has applications in semiconductor memory devices, since it incorporates an intrinsic diode coupling scheme. It is also effective in driving bipolar motor control switching circuits, such as in automotive electronics. In RF applications, its low noise levels make it particularly suitable for low-noise amplifiers. The ZTX653STZ is also suitable for use in digital logic circuits, providing good current gain and an accurate transfer characteristic.
For its working principle, the ZTX653STZ utilizes the special mechanism of hole injection. This involves a charge injection from the collector to the base of the transistor. This bombardment creates electron-hole pairs, which subsequently create the current from the base to the collector. This is done with zero external voltage applied to the base-emitter junction, thus it is called generation current. This is used to provide high gain and low noise characteristics in the device.
As mentioned above, the ZTX653STZ is one of the most effective BJTs available. It has advantages in both high-speed and low-noise applications, making it an ideal choice for a broad range of circuit design needs. The ZTX653STZ provides excellent performance in the fields of low-noise amplifiers, RF applications, optical imaging, data processing, motor control switching and digital logic applications.
The specific data is subject to PDF, and the above content is for reference
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