ZTX649STZ

Power - Max:	1W
Frequency - Transition:	240MHz
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3, Formed Leads
Supplier Device Package:	E-Line (TO-92 compatible)
Base Part Number:	ZTX649
Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 2V

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The ZTX649STZ transistor is a single BJT transistor device and is mostly associated with general purpose amplifier and switching applications. It has a PNP construction, with a maximum collector current rating of -300 mA, a collector-emitter voltage rating of -60V, an emitter-base voltage rating of -5V and an HFE/beta rating of 180-480.The ZTX649STZ transistor is an ideal and reliable device of choice for most general purpose amplification and switching applications. As a PNP device, it works best in applications that require power from the collector to be delivered to a load. This type of application is common in audio amplifiers and motor controllers, where the collector provides power and the base provides a control signal.This transistor has a normal gain which ranges from 180 to 480. At higher frequencies, the transistor has a gain-bandwidth product of up to 3GHz, which means it can be operated over wide frequency ranges. In addition, the device has a maximum power output rating of up to 1.5W.Its VCEsat rating also helps to determine the transistor’s maximum power output. This rating is typically around 0.2V, which means that the transistor can withstand up to 1.5W of power before it starts to overheat. With a VCEsat rating of 0.2V, the transistor should be able to produce good power output in most applications.The ZTX649STZ transistor is specially designed to work in most applications that require high switching speeds and high frequency amplification. Its maximum collector-base capacitance ensures that the device can produce high frequency signals with relative ease and stability.The ZTX649STZ transistor’s maximum voltage and power ratings are suitable for many general purpose switching and amplification applications. The device’s collector-emitter voltage rating of -60V is particularly useful in many industrial applications, as the device does not overheat quickly and is able to supply a constant voltage over long periods of time.In terms of the transistor’s working principle, the PNP construction of the ZTX649STZ ensures that the device operates in a forward-biased manner. This means that the device produces current when a voltage is applied to its base, which is then transferred to its collector. This also allows for the production of a positive voltage at the collector as well as a negative voltage at the emitter.The ZTX649STZ transistor is a reliable device that is suitable for many general purpose amplification and switching applications. Its PNP construction, maximum collector current rating, gain-bandwidth product and VCEsat rating make it the ideal choice for many power circuitry applications.

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