Allicdata Part #: | ZVNL110ASTOB-ND |
Manufacturer Part#: |
ZVNL110ASTOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 320MA TO92-3 |
More Detail: | N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole ... |
DataSheet: | ZVNL110ASTOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 320mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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The ZVNL110ASTOB is a single, N-channel, logic level gate, depletion-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is commonly used in a variety of electronic applications. As a low-threshold voltage device, the ZVNL110ASTOB has a very low on-state resistance and an extremely low gate-source capacitance, making it an ideal choice for applications where high speed and low power dissipation are important.
The ZVNL110ASTOB is usually used as a switch that can be turned on or off with a very small change in the voltage applied to its gate. When the voltage applied to the gate is increased, the switch turns on and current flows from the drain to the source. Conversely, when the voltage applied to the gate is decreased, the switch turns off and no current flows. This makes the ZVNL110ASTOB suitable for use in power supply circuits, digital logic circuits, and in sensing and control circuits.
The ZVNL110ASTOB has a number of features that make it especially well-suited for applications that require precise control of the on-state resistance and gate-source capacitance. The front-side gate is designed to reduce the parasitic capacitance and allow precise control over the on-state resistance. Additionally, its low-threshold voltage ensures that the ZVNL110ASTOB can switch on quickly and without generating substantial power dissipation. This makes it a great choice for logic level switching applications, where precise timing is essential.
The ZVNL110ASTOB also features a high-voltage breakdown rating, which ensures that it can handle large voltage spikes without damaging the device. This is particularly important in many automotive applications, where large transients can occur due to changes in load or environmental conditions. Additionally, the ZVNL110ASTOB has a low gate charge, which reduces the amount of power used when switching the device and thus increases efficiency.
The ZVNL110ASTOB\'s low-threshold voltage and gate-source capacitance make it well-suited for PWM (Pulse Width Modulation) applications, where precise control of the duty cycle is required. Its low-threshold voltage also allows it to be used in noise-sensitive applications, where digital signals must remain clean and free from interference. And, its high-voltage rating makes it suitable for use in harsh environments, where breakdown or short-circuit protection may be needed.
The ZVNL110ASTOB is a versatile MOSFET, and is ideal for a wide range of applications. Its low on-state resistance, low gate-source capacitance, and high-voltage rating make it well-suited for a variety of high-speed and low noise applications, such as logic level switching circuits, pulse width modulation circuits, and automotive power and control circuits.
The specific data is subject to PDF, and the above content is for reference
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