ZVNL120GTA Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.5V @ 1mA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	85pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	10 Ohm @ 250mA, 5V
Drive Voltage (Max Rds On, Min Rds On):	3V, 5V
Current - Continuous Drain (Id) @ 25°C:	320mA (Ta)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The ZVNL120GTA is a single N-channel enhancement-mode Field Effect Transistor (FET) designed for low voltage, low current and high speed applications. This component has a low on-state resistance and a high power-off resilience to make it suitable for a wide range of applications. This component can be used in a variety of applications ranging from high-current power switches and amplifiers to low-power switching and current sensing. It is also ideal for applications that require high speed performance, such as LCD displays and LED lighting. This component has a single N-type, source-drain terminal configuration. The source is connected to the negative gate and the drain is connected to the collector. The component has an encapsulated gate with a voltage gate threshold voltage of 2.7 volts. The component also features an inherently low on-state resistance which makes it ideal for low voltage, low current applications. The principles of operation of the ZVNL120GTA are based on the basic principles of Field Effect Transistors. An input signal is applied to the gate, which creates a conductive channel between the source and drain. The gate voltage controls the conductivity of the channel, and this creates the desired output. As the gate voltage increases, the drain current increases, and as the gate voltage decreases, the drain current decreases. The ZVNL120GTA is available in several versions, including a 30V version and a 60V version. The 30V version has an on-state resistance of approximately 0.8 Ohms, while the 60V version has an on-state resistance of approximately 0.65 Ohms. The component is designed to operate with a minimum voltage supply of 1.8V. The ZVNL120GTA is often used for low power and low voltage applications that require high speed performance. This component can be configured with an additional resistor to provide temperature-compensated current sensing, allowing it to be used for motor speed control. It can also be used to create an analog signal in response to a digital signal, or to modulate signals to reduce power loss due to switching. In summary, the ZVNL120GTA is a single N-channel enhancement-mode Field Effect Transistor designed for low voltage, low current and high speed applications. This component has a low on-state resistance and a high power-off resilience, making it suitable for a wide range of applications. It is available in different versions for different voltage requirements, and can be used for motor speed control and power loss reduction.

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