ZVNL120GTC

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	3V, 5V
Rds On (Max) @ Id, Vgs:	10 Ohm @ 250mA, 5V
Vgs(th) (Max) @ Id:	1.5V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	85pF @ 25V
FET Feature:	--
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223
Package / Case:	TO-261-4, TO-261AA

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ZVNL120GTC Application Field and Working Principle

The ZVNL120GTC is a MOSFET from Vishay Siliconix which belongs to the Single Group of Transistors - FETs and MOSFETs. It is a vertical power MOSFET designed for various applications such as SMPS, audio amplifier, lighting and battery charging. In this article we will present the ZVNL120GTC features and its applications, the structure of the MOSFET and its working principle.

Features of the ZVNL120GTC

This MOSFET is available in a TO-220AB package and it has an integrated fast-recovery anti-parallel diode. It functions in high frequency applications, while it also has a low gate charge and low gate-coupled capacitance. The ZVNL120GTC offers higher efficiency and power density in low-noise switching power supplies and other high-frequency applications. It works with a drain voltage of up to 120V with a drain current of up to -11A and a continuous drain current of up to -8A. The threshold voltage is 2.2V and the on-state resistance is 4.3 mΩ at VGS=10V. The on-resistance increases with the drain-source voltage, for example for a drain-source voltage of 100V, the on-resistance is 6.5 mΩ. Some of the thermal characteristics include a maximum junction temperature of 175°C and a thermal resistance of RthJC of 175°C/W.

Applications of the ZVNL120GTC

This MOSFET is designed for various switch mode power supplies. Some of those include switching power supplies for computer peripherals, audio power amplifiers, set top boxes, LED lighting, battery charging and cooling fans.

Structure of the ZVNL120GTC

The ZVNL120GTC is a vertical power MOSFET. It has an integrated fast-recovery anti-parallel diode. It’s built in a TO-220AB package and is available in a few packages, including the leaded and non-leaded packages. The MOSFET consists of three terminals: the source, the gate and the drain. The source is the source of electrons, while the gate is the control gate. The drain is the output and it’s where the current flows out of the MOSFET.

Working Principle of the ZVNL120GTC

The working principle of the ZVNL120GTC is similar to that of other MOSFETs. A voltage between the gate and the source, known as the gate-source voltage, exerts an electric field that controls the current through the device. When the gate-source voltage is higher than the threshold voltage, the current between the source and the drain increases. This is known as the saturation region of the device. When the gate-source voltage is lower than the threshold voltage, the current between the source and the drain decreases. This is known as the depletion region of the device. In the saturation region, the device acts like a switch and the current through it can be controlled by the gate-source voltage. This is why it is often used as a switch in a circuit. The ZVNL120GTC is typically used in high frequency applications and it’s well suited for use in switching power supplies and other high frequency applications due to its low gate charge and low gate-coupled capacitance. In conclusion, the ZVNL120GTC is a vertical power MOSFET which is designed for various SMPS, audio amplifier, lighting and battery charging applications. The device has three terminals: the source, the gate and the drain. It works based on the gate-source voltage: when the gate-source voltage is higher than the threshold voltage, the current between the source and the drain increases and when the gate-source voltage is lower than the threshold voltage, the current between the source and the drain decreases. The device is well suited for use in high frequency applications due to its low gate charge and low gate-coupled capacitance.

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