Allicdata Part #: | ZVNL110GTC-ND |
Manufacturer Part#: |
ZVNL110GTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 600MA SOT223 |
More Detail: | N-Channel 100V 600mA (Ta) 1.1W (Ta) Surface Mount ... |
DataSheet: | ZVNL110GTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 600mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Description
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ZVNL110GTC Application Field and Working Principle
The ZVNL110GTC from Diodes Inc is a single N-channel MOSFET transistor with a voltage range of 0 to 100 Volts, drain current of 11 A and gate threshold of 2 V. This MOSFET is suitable for use as an analog switch in applications that require high side switching as well as power switching.Features
The ZVNL110GTC is a single N-channel MOSFET transistor with some noteworthy features:- High speed switching with a low on-resistance.
- High power operation with a maximum current of 11 Amps.
- Designed for use in LED driving, power converters and power management applications.
- Integrated body diode for fast reverse conduction.
- Protected against reverse bias stressing.
Applications
The ZVNL110GTC is suitable for many applications that require high side switching and power switching, including:- DC to DC converters.
- LED lighting.
- Power management.
- High power switching.
- Motor control.
- Industrial controllers.
- Power battery chargers.
Working Principle
MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are voltage-controlled devices that are used as switches to control electrical current. The ZVNL110GTC is an N-channel MOSFET, which means it is designed to turn on when its gate voltage is more positive than its source voltage and current will flow from the drain to the source.The ZVNL110GTC operates at a gate threshold of 2 V, meaning that it requires a gate voltage of at least 2 V to turn on. When the gate voltage is lower than 2 V, the transistor is said to be in the “off” state and no current will flow through it. To turn the transistor on, the gate voltage needs to be increased to more than 2 V.The other key feature of the ZVNL110GTC is its on-resistance, which is the resistance between the drain and source when the transistor is on. This is an important parameter to consider when selecting a MOSFET since it affects the efficiency of the application. The ZVNL110GTC has a maximum on-resistance of 0.7 mΩ, which makes it suitable for applications that require efficient switching.The ZVNL110GTC also integrates a body diode, which is used to turn the transistor off in case of a reverse bias condition. The diode conducts when the source voltage is higher than the drain voltage, allowing current to flow and preventing damage to the transistor.In summary, the ZVNL110GTC is a single N-channel MOSFET transistor with a voltage range of 0 to 100 Volts, drain current of 11 A and gate threshold of 2 V. It is suitable for applications that require high power switching and fast switching speeds. The transistor also features a low on-resistance and integrated body diode for reverse bias protection.The specific data is subject to PDF, and the above content is for reference
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