Allicdata Part #: | ZVP0120AS-ND |
Manufacturer Part#: |
ZVP0120AS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 200V 0.11A TO92-3 |
More Detail: | P-Channel 200V 110mA (Ta) 700mW (Ta) Through Hole ... |
DataSheet: | ZVP0120AS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 110mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 32 Ohm @ 125mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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MOSFETs (metal oxide semiconductor field-effect transistors) are power devices that employ the principles of a field-effect transistor to provide robust, high-speed switching and excellent linear properties in a single package. The ZVP0120AS is a dual 30V/80A MOSFET that provides low on-resistance and high current carrying capacity. It is made up of two units in a single package, and each unit includes two pairs of N-type and P-type MOSFETs. The device has an advanced thermal management design that makes it suitable for low voltage, high-current applications. It also features an anti-parallel diode to protect the device from transient over-currents.
The ZVP0120AS has a wide range of applications, including high voltage DC-DC converters, power factor correction (PFC) circuits, class D amplifiers, servers, and computing systems. The device has a high voltage rating of 30V and is capable of delivering up to 80A continuous drain current. It offers low on-resistance, which makes it suitable for applications that require fast switching speeds and good linearity. Its advanced thermal management design ensures safe and reliable operation even under tough operating conditions.
The working principle of the ZVP0120AS is simple yet effective. The device consists of two pairs of transistors, an N-type and a P-type. When a gate voltage is applied, the N-type transistor flashes the electrons and the P-type transistor floodfills the electrons, which forms a conductive channel between the source and drain. The channel allows the electrons to flow through, and the current is proportional to the gate voltage.
The device’s body diode, which is connected between the source and the drain, ensures short-circuit protection and reduces the switching times. The body diode helps in dissipating energy that is generated due to the build-up of parasitic capacitances between the source and drain. The anti-parallel diode allows current to flow in the reverse direction, which helps in preventing transient over-currents.
To sum up, the ZVP0120AS MOSFET is a dual 30V/80A device that is suitable for high voltage and high current applications. Its robust, high speed switching and excellent linear properties make it a great choice for applications that require quick switching and reliable operation. The device is easy to use and takes advantage of advanced thermal management design and anti-parallel diode protection. With its wide range of applications and features, the ZVP0120AS is an ideal choice for any power management application.
The specific data is subject to PDF, and the above content is for reference
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