ZVP0120ASTZ Allicdata Electronics
Allicdata Part #:

ZVP0120ASTZ-ND

Manufacturer Part#:

ZVP0120ASTZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 200V 0.11A TO92-3
More Detail: P-Channel 200V 110mA (Ta) 700mW (Ta) Through Hole ...
DataSheet: ZVP0120ASTZ datasheetZVP0120ASTZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 32 Ohm @ 125mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3
Description

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The ZVP0120ASTZ is a N-channel MOSFET commonly used in electronics. It is a single-gate, low voltage, and low threshold MOSFET, making it ideal for operating at voltages of 3.3 to 5 V. It is often used in the application fields of power supply, battery protection devices, communications, DC-DC converters and PC board interfaces.

MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors, are one of the main types of transistors used in modern electronics. They are used in a variety of electronic circuits and systems, including logic gates and amplifiers. MOSFETs are advantageous over bipolar junction transistors (BJTs) due to their higher input impedance and lower power consumption. This makes them ideal for applications in portable and low-power electronics. The ZVP0120ASTZ is one of the most common MOSFETs and is frequently used in consumer electronics and other applications.

The ZVP0120ASTZ MOSFET works by using the electrical properties of the metal oxide-semiconductor (MOS) interface. This interface acts as a gate, controlling the flow of electrons between the source (S) and the drain (D). The gate is the part of the MOSFET that is used to control the flow of electrons; thus, it1s controlled by a voltage applied to the gate terminal. When a voltage greater than the gate threshold voltage is applied to the gate, it causes electrons to flow from the source to the drain. As the voltage rises, the current flow increases. Conversely, when the gate voltage is less than the threshold voltage, electrons are not allowed to flow and the MOSFET is said to be off.

The ZVP0120ASTZ MOSFET also incorporates other features to ensure that it operates reliably in various electronic circuits. One of these features is dynamic dV/dt and di/dt protection, which helps protect the MOSFET from unexpected voltage and current changes. The MOSFET also features an integrated reverse diode, which provides protection when the MOSFET is switched off. Finally, the MOSFET has an integrated ESD protection diode, which helps protect the circuit from electrostatic discharge.

In conclusion, the ZVP0120ASTZ MOSFET is a single-gate, low voltage, and low threshold MOSFET widely used in the application fields of power supply, battery protection devices, communications, DC-DC converters and PC board interfaces. It utilizes the electrical properties of the MOS interface to control the flow of electrons, and is made reliable by its dynamic dV/dt and di/dt protection, integrated reverse diode, and integrated ESD protection diode.

The specific data is subject to PDF, and the above content is for reference

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