ZVP0545GTA Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZVP0545GTA is a two-terminal low-power, normally-on,gate-controlled, Schottky barrier, N-channel enhancement-mode,planar DMOS field-effect transistor (FET). The device consistsof a DMOS transistor and a Schottky barrier contacting thesource. The ZVP0545GTA has an absolutely maximized on-stateresistance and a very low threshold voltage (VGSth), which make itideal for use in portable and non-portable applications where verylow power (VCC) and long battery life are required.

Application Field

The ZVP0545GTA is suitable for the design of very low powerapplications in low voltage and mid voltage range. This versatile,n-channel field-effect transistor can be used in a wide range ofapplications, including power converters and controllers, signalconditioners, transistors and amplifiers.

The ZVP0545GTA can be used in a wide range of applicationssuch as level-shifters, amplifiers and comparators as well as in lowvoltage DC-DC converters and commutating switch (CS) applications.Examples of CS applications include buck-boost, buck, and boostconverters.

The ZVP0545GTA is also suitable for low voltage LED lighting,battery charging and switching applications. In addition, it can beused in high side current sensing, where rail-to-rail drivecapabilities are necessary.

Working Principle

The ZVP0545GTA contains an N-channel MOSFET with a Schottkybarrier forming a source terminal. When no voltage is applied to thegate (VGS = 0), the p-n junction in the source terminal isreverse-biased, and the MOSFET remains open (OFF). When a positivesource-gate voltage (VGS) is applied, the MOSFET enters anon-state and the drain current (ID) starts to flow.

As the gate voltage (VGS) increases, the drain current (ID)increases exponentially. The maximum drain current allowable isdefined by the junction breakdown voltage (BVdss) of the MOSFET.The gate-drain voltage (VGS) determines the ON-state resistance ofthe device.

When the drain-source voltage (VDS) is greater than thethreshold voltage (VGSth), the MOSFET enters the linear region andthe gate-drain voltage (VGS) controls the channel resistance. TheMOSFET channel resistance decreases as the gate-drain voltage (VGS)increases, allowing more current to flow through the channel.

In the saturation region, the channel resistance no longerchanges with the gate-drain voltage (VGS). The saturation voltage(VDSat) is the voltage at which the drain current (ID) reachesmaximum. The power-on linear region is stopped when the drain-sourcevoltage (VDS) reaches the breakdown voltage (BVdss) of themosfet.

The specific data is subject to PDF, and the above content is for reference