Allicdata Part #: | ZVP1320ASTOA-ND |
Manufacturer Part#: |
ZVP1320ASTOA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 200V 0.07A TO92-3 |
More Detail: | P-Channel 200V 70mA (Ta) 625mW (Ta) Through Hole E... |
DataSheet: | ZVP1320ASTOA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 70mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 80 Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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The ZVP1320ASTOA is a P-channel Enhancement Mode Field Effect Transistor (MOSFET). It is specifically designed to improve the performance of advanced telecom and computer systems. It is built to handle high-side switching applications with its low on-resistance and high-performance characteristics. It also includes a wide range of features that enable it to handle a range of operating temperatures and power dissipation requirements.
The ZVP1320ASTOA is a fast-switching MOSFET device, which has been designed for use in high-frequency applications. With its low on-resistance and excellent thermal stability characteristics, it is suitable for a wide range of applications. It is also very reliable and reliable in electronic equipment, controlling the output power to the maximum available levels.
The ZVP1320ASTOA is a single-channel MOSFET. It is a power device that is rated at 120 Volt and 18 Amp maximum drain current and drain-source resistance of 6 ohms. It features both a low and a high side switch, allowing it to be used as either a P-channel MOSFET or an N-Channel MOSFET, depending on the application. It provides good user control and flexibility when used in applications requiring switching.
The ZVP1320ASTOA has a wide range of current carrying capabilities and has a low gate threshold voltage. It requires only 3.3V gate-drive supply for smooth operation, making it an ideal component for applications where low power supply is required. The device also offers excellent thermal stability and can withstand higher junction temperature without breakdown. For reliable operations, the device offers high ESD (Electro-Static Discharge) protection up to 8KV.
The ZVP1320ASTOA has a wide range of applications, such as in motor control, clock multiplier circuits, high-side power switching, DC-DC converters, and electro-mechanical switching devices. It is also widely used in systems that require high speed and low-power consumption, such as communication systems, data storage systems, and point-of-sale equipment. In addition, it is widely used in audio and power amplifiers, along with portable electronic equipment.
The working principle of the ZVP1320ASTOA is very simple. It is operated by applying voltages to its source, gate, and drain. When the gate voltage is applied, the gate-source voltage increases, resulting in a decrease in the current that flows through the device. When the drain voltage is applied, the drain-source voltage increases, resulting in an increase in current flow. As the current flow increases, the device’s resistance decreases, which eventually results in the device’s switching action.
In conclusion, the ZVP1320ASTOA is a feature-rich and efficient power device that is ideal for a variety of applications. It is highly reliable and offers excellent thermal stability, allowing it to be used in high-temperature and high power switching applications. It also boasts a wide range of current carrying capabilities and low gate threshold voltage, making it suitable for applications requiring low power or high switching speed.
The specific data is subject to PDF, and the above content is for reference
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