
Allicdata Part #: | ZVP1320ASTZ-ND |
Manufacturer Part#: |
ZVP1320ASTZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 200V 0.07A TO92-3 |
More Detail: | P-Channel 200V 70mA (Ta) 625mW (Ta) Through Hole E... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Package / Case: | E-Line-3 |
Supplier Device Package: | E-Line (TO-92 compatible) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 Ohm @ 50mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70mA (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Box (TB) |
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The ZVP1320ASTZ is a single P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed to operate over very wide temperature ranges. It is a versatile and durable device that can handle a wide range of load current, power levels, and switching frequencies. The ZVP1320ASTZ is specifically designed to be used in applications where the primary functional requirements are high speed switching, low on-state resistance (RDSon), and low leakage current. It is also capable of operating in both high-side and low-side configurable applications.
The ZVP1320ASTZ is constructed with an active area composed of N-channel MOSFET transistors. These transistors are activated by a voltage-controlled gate, which is then connected to an external source of bias. This gate bias is used to adjust the amount of current that the MOSFETs can carry through the active area. The ZVP1320ASTZ also has a reverse-drain-source diode, which allows for protection in the event of a reverse polarity connection. This diode should be used to protect the MOSFETs and other components from bad current flows.
The ZVP1320ASTZ is capable of operating in both high-side and low-side (also referred to as buck or boost) configurations. In the high-side configuration, the gate is typically driven by a logic signal and the MOSFET is used to switch the load current. In the low-side configuration, the gate is typically driven by a gate driver and the MOSFET is used to switch the ground reference. These two configurations are very commonly used in most designs and the ZVP1320ASTZ is well suited for both of them.
The ZVP1320ASTZ is a very robust and durable device that features a breakdown voltage (Vds) of 1.2V. This is a very high voltage level and is usually more than enough voltage for the vast majority of general-purpose applications. The device also has an extremely low on-state resistance (RDSon) of only 15 mΩ @4.5V. This is extremely low and should be more than enough for most applications.
The ZVP1320ASTZ is a great choice for many different applications. It is a highly reliable device with a wide range of features that make it suitable for a wide variety of applications. It is capable of handling high speed switching, as well as very low on-state resistance and leakage current. It also offers very high breakdown voltage and is capable of operating in both high-side and low-side configurations, which makes it an all-around great choice for many different designs.
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