| Allicdata Part #: | ZVP1320FTC-ND |
| Manufacturer Part#: |
ZVP1320FTC |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 200V 0.035A SOT23-3 |
| More Detail: | P-Channel 200V 35mA (Ta) 350mW (Ta) Surface Mount ... |
| DataSheet: |  ZVP1320FTC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200V |
| Current - Continuous Drain (Id) @ 25°C: | 35mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 80 Ohm @ 50mA, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 350mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23-3 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
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The ZVP1320FTC is an N-channel enhancement mode vertical double diffusion MOSFET that is capable of providing highly efficient power transfer. This device features very low RDS(on) and low gate charge, making it well-suited for applications such as audio amplifier stages, battery protection circuits and high side switching. It is also suitable for various other applications due to its high output current capability.
The ZVP1320FTC has a source and drain structure with a double diffusion structure. The double diffusion structure allows the device to have features such as low on-resistance and low capacitance. This type of device has a much higher voltage rating than a single diffusion type device and can handle higher current and power levels.
The ZVP1320FTC operates using an N-MOSFET channel. This type of channel utilizes an external voltage source, usually in the form of a battery, to generate an internal electric field. This electric field causes a depletion region to form, effectively allowing current to flow between the source and drain when a greater voltage is applied to the gate. This type of device is most commonly used for low side switching, as it reduces the amount of power required to switch the circuit.
The ZVP1320FTC is a versatile and highly efficient power MOSFET. Its double diffusion structure provides low on-resistance, making it suitable for use in applications that require high power transfer efficiency. Additionally, its low gate charge and low capacitance allow it to be used in audio amplifier stages and other high-side switching applications. This versatile device is ideal for a range of differnt applications and can provide reliable power and efficiency.
The specific data is subject to PDF, and the above content is for reference
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