Allicdata Part #: | ZVP3306ASTOB-ND |
Manufacturer Part#: |
ZVP3306ASTOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 60V 0.16A TO92-3 |
More Detail: | P-Channel 60V 160mA (Ta) 625mW (Ta) Through Hole E... |
DataSheet: | ZVP3306ASTOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 160mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 14 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 18V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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ZVP3306ASTOB is an N-channel, 30 volt high voltage vertical MOSFET which was released in 2020 by Vishay Intertechnology. It is often used in power management and other consumer electronics applications. The device is suitable for various high-end consumer applications such as TVs, air conditioners and washing machines.
The device comes in a small SO-8 packaging and has a high maximum drain-source voltage (Vds) rating of 30 volts. This enables it to offer better protection against over-voltage and transients. The device also has a high peak, avalanche and drain current ratings which allows it to perform better and more efficiently. It is specifically designed for high frequency switching and low gate charge applications.
The ZVP3306ASTOB features a P-body structure, which allows for better performance in high-frequency and low-gate charge applications. The device has a high transconductance and low gate charge to ensure that it is able to handle fast switching speeds. Additionally, it has a low input and output capacitance, low on-resistance, and a low thermal resistance package. This ensures that it is able to offer more efficient performance.
The ZVP3306ASTOB has a wide range of applications, primarily in power management and other consumer electronics. It is used in many power management applications such as in voltage level transducers, buck, boost and flyback converters, AC/DC adapters, power inverters and power converters. It is also frequently used for lighting and switching applications, such as automotive and industrial lighting, LED drivers, and lighting control. Additionally, the device can be used in DC/AC switching, audio amplifiers, industrial robotics and motors.
The ZVP3306ASTOB operates on the principle of field-effect transistor (FET). FETs are transistors that use a gate electrode to control the flow of carriers between the source and drain electrodes. The gate electrode is electrically insulated from the source and drain electrodes, by a dielectric layer. When a voltage is applied to the gate electrode, it creates an electrostatic field that modulates the number of carriers in the channel. The channel can be completely opened (on) or completely closed (off), depending on the voltage applied to the gate. This is how FETs are used to switch and control power.
The ZVP3306ASTOB features a wide range of features, including a low gate threshold voltage and low input/output capacitance, which ensures more efficient power management. Additionally, it has a low on-resistance, low thermal resistance package and a high peak, avalanche and drain current ratings, which makes it a more reliable high voltage MOSFET. It has high robustness, excellent thermal characteristics and a simple installation process due to the SO-8 packaging.
In conclusion, the ZVP3306ASTOB is a high voltage MOSFET which is ideal for high frequency switching, low gate charge applications, and power management solutions. It has a wide range of applications in power management and other consumer applications. The device is reliable, efficient and offers robust performance with a small package size. The device operates on the principle of FET, which enables its superior performance under extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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