Allicdata Part #: | ZVP3310ASTOA-ND |
Manufacturer Part#: |
ZVP3310ASTOA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 100V 0.14A TO92-3 |
More Detail: | P-Channel 100V 140mA (Ta) 625mW (Ta) Through Hole ... |
DataSheet: | ZVP3310ASTOA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 140mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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The ZVP3310ASTOA is a single N-channel enhanced Mode Field Effect Transistor (MOSFET) optimized for high frequency switching regulators, DC-DC converters, inverters, motor control and other applications requiring fast switching, low on-state resistance and low gate charge. The ZVP3310ASTOA is designed to minimize switching loss and improve total efficiency of the converter. It is capable of operation from - 55°C to 150°C junction temperature.
The ZVP3310ASTOA features a single N-channel MOSFET with enhanced mode field-effect technology. It is constructed of an embedded D-MOS structure. The device is available in SOT-23 and SO-8 packages, and offers very low on-state resistance, low input capacitance and fast switching speed. The ZVP3310ASTOA is the perfect complement for complex high voltage modules, such as the ZVN3310APSwitching regulator.
The working principle of the ZVP3310ASTOA is based on the physical structure of the device. The N-channel MOSFET’s gate-source-drain structure is designed to have a very low on-state resistance when a voltage is applied to the gate. The design of the device allows the current to flow directly between the source and the drain without any losses due to reverse bias parasitic strength. This allows the device to carry very large currents with minimal power dissipation.
The ZVP3310ASTOA’s application field is very broad. It can be used in a wide range of applications, such as switching regulators, DC-DC converters, inverters, motor control systems, LED drivers and power supplies. The device is suitable for industrial, automotive, medical and consumer applications. It can also be used in commercial and telecom applications. The ZVP3310ASTOA is an ideal workhorse component for many end-products.
In summary, the ZVP3310ASTOA is a single N-channel enhanced mode field effect transistor (MOSFET) designed to minimize switching loss and improve total efficiency of converters. The device is optimized for high frequency switching regulators, DC-DC converters, inverters, motor control and other applications requiring fast switching, low on-state resistance and low gate charge. It is suitable for a wide range of applications, such as switching regulators, DC-DC converters, inverters, motor control systems, LED drivers and power supplies.
The specific data is subject to PDF, and the above content is for reference
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