Allicdata Part #: | ZVP3306ASTZ-ND |
Manufacturer Part#: |
ZVP3306ASTZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 60V 0.16A TO92-3 |
More Detail: | P-Channel 60V 160mA (Ta) 625mW (Ta) Through Hole E... |
DataSheet: | ZVP3306ASTZ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 160mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 14 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 18V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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ZVP3306ASTZ is a kind of versatile field effect transistor (FET) that offers excellent system performance with relatively low heat dissipation. This FET can be used in both high-side and low-side switching applications. It is equipped with a low on-resistance of 1.4 Ω and is designed to control the flow of current in a variety of systems. Its wide operational range of 25V to 40V makes it suitable for many situations. Additionally, it can handle large amounts of power, making it ideal for high current applications.
The ZVP3306ASTZ is often utilized in telecommunication systems, automotive systems, process automation, and washing and drilling machines. It has a high current drive which allows it to switch high power loads without significant power losses. Additionally, it can be used as a low side switch in applications such as lighting and power conversion. It is a distinctive low RDS(on) DE-MOS and works in conjunction with the P-Conditioning circuits.
The ZVP3306ASTZ is a single field-effect transistor that utilizes a vertical structure. This vertical structure enables it to be operated at a high voltage and relatively low temperature. The device also has low gate charge, making it very efficient in applications such as power conversion or switching power supplies. It is also designed to minimize EMI, making it suitable for use in radio frequency circuits. Additionally, its low operating temperature means that it can be used in a wide range of applications without fear of thermal runaway.
The ZVP3306ASTZ consists of a gate and two source/drain terminals. When a voltage is applied to the gate, a field will be created between the source and drain terminals. This field will affect the behavior of the electrons and will either allow them to be attracted to the drain, or repelled from the drain. This creates an electric current that can be controlled by the voltage applied to the gate. This is the basic principle behind the transistor, and it is how the ZVP3306ASTZ functions as a FET.
The ZVP3306ASTZ is a versatile, low noise, low off-state resistance FET. It is suitable for use in many high-current applications, such as in power conversion, lighting, and telecommunication systems. The FET’s low temperature operation makes it ideal for use in sensitive electronic applications as well. Additionally, it is designed to reduce EMI and thus is suitable for a variety of radio frequency applications. The ZVP3306ASTZ is thus a great choice for projects which require reliable, efficient, and cost-effective switch control.
The specific data is subject to PDF, and the above content is for reference
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