Allicdata Part #: | ZVP3310ASTZ-ND |
Manufacturer Part#: |
ZVP3310ASTZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 100V 0.14A TO92-3 |
More Detail: | P-Channel 100V 140mA (Ta) 625mW (Ta) Through Hole ... |
DataSheet: | ZVP3310ASTZ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 140mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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The ZVP3310ASTZ is a PMOS FET (Metal Oxide Semiconductor Field Effect Transistor) specifically designed to operate as a low-power switch. It is designed for use in high voltage, low-current applications such as power switching and amplifier switching, where it can help to control the flow of digital signals and reduce overall power consumption. The device\'s robust design ensures that it can withstand high voltage surges and be safe for use in lightly-populated circuits.
The ZVP3310ASTZ works by using a central gate electrode that is used to create an electrical field between two terminals (a source terminal and a drain terminal). This field is used to modulate the conductivity of the plastic-type semiconductor material within the device, commonly known as the ‘channel’. As a result, a current is allowed to flow through the device. In some cases, the device can be used to prevent or block current flow by keeping the gate voltage at a certain level.
The ZVP3310ASTZ has several features that make it well-suited to many applications in various industries. Its low gate capacitance ensures that it can be used in high-speed switching applications while still maintaining relatively high levels of performance. Additionally, its low gate charge (less than 10 pF) makes it ideal for use with low noise signals as it provides minimal interference. Furthermore, its low gate resistance (Rg) prevents excessive heat dissipation and helps to provide a stable current flow through the device.
The ZVP3310ASTZ is well-suited to a variety of applications such as power switching, amplifier switching, logic switching, and circuit protection. It can be used as an on/off switch in digital circuits such as logic gates, or it can be used to control the flow of digital signals in power amplifiers. It can also be used as a circuit protection device, allowing for a highly durable and reliable switching system. It is especially useful in low-current applications, where its low gate voltage can help increase circuit efficiency.
In summary, the ZVP3310ASTZ is a PMOS FET designed for use in high voltage, low-current applications such as power switching, amplifier switching, and circuit protection. It has a low gate capacitance, low gate charge, and low gate resistance, allowing for stable current flow and minimal interference with signals. With its robust design and efficient operation, it is an ideal choice for many applications in various industries.
The specific data is subject to PDF, and the above content is for reference
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