ZXTP03200BZTA Allicdata Electronics

ZXTP03200BZTA Discrete Semiconductor Products

Allicdata Part #:

ZXTP03200BZTADITR-ND

Manufacturer Part#:

ZXTP03200BZTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 200V 2A SOT89
More Detail: Bipolar (BJT) Transistor PNP 200V 2A 105MHz 1.1W S...
DataSheet: ZXTP03200BZTA datasheetZXTP03200BZTA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 1.1W
Frequency - Transition: 105MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Description

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The ZXTP03200BZTA is a single bipolar junction transistor optimized for a wide range of applications in high frequency switching and logic circuits.

The device is constructed with a base, a collector, and an emitter terminal and functions as a normally off switching element in a wide variety of applications. The collector current is locally coupled to the base, resulting in an inverting current gain. Additionally, the gain of the device can be varied by the changes of the collector current.

Although the ZXTP03200BZTA transistor is most commonly used to switch circuits, it is also suitable for applications in amplifiers. Its basic functions in amplifiers include current amplification, voltage augmentation and conversion of one signal type into another. As a current-controlled device, the current flowing into the base controls the current flowing out of the collector, which then yields a voltage gain.

In terms of its electrical characteristics, the ZXTP03200BZTA is an N-channel device with a high current transfer ratio (CTR) of about 40. It has a collector terminal voltage of up to 350 volts, an IC rating of up to 3.2 amperes and an IB rating of up to 0.32 amperes. Additionally, the device has a low input capacitance (CB) of about 35 pF, a maximum power dissipation of about 250 mW, and a maximum reverse transfer capacitance of 4 pF.

The ZXTP03200BZTA transistor is well-suited for applications in digital circuits, signal processing, and collector to emitter feedback circuits. In digital circuits, it can act as a switch and is resistant to ringing and other noise. It is widely used in switching applications because of its low turn-on voltage, low leakage currents, fast switching times and its fast response time.

In terms of its working principle, the ZXTP03200BZTA transistor is a common emitter circuit. When the base voltage is raised above the emitter voltage, a conductive path is established between the base and the emitter and current begins to flow to the emitter. This current then causes a voltage drop across the collector and emitter junction, which amplifies the current and causes the collector current to rise, thus providing a current gain. The increased collector current is then applied to the load.

Overall, the ZXTP03200BZTA is an ideal device for a wide range of applications in high frequency switching and logic circuits. Its excellent performance and cost-effectiveness make the device a suitable choice for a variety of electronic applications.

The specific data is subject to PDF, and the above content is for reference

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