ZXTP2013ZTA Discrete Semiconductor Products

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ZXTP2013ZTA is a current transfer transistor which belongs to a group of Single Bipolar Junction Transistors (BJT). As a type of transistor, it has some unique features which differentiate it from other transistors. Compared to other transistors, ZXTP2013ZTA has a higher collector current and a lower collector-emitter breakdown voltage. It also has a larger current gain and a smaller turn-on voltage than other transistors. All these characteristics make ZXTP2013ZTA an ideal choice for applications where high power is required.

The electron flow in a transistor from the emitter to the collector is called the base current. The voltage applied across the emitter-base junction is called the base-emitter voltage. The base current and base-emitter voltage determine the current gain, also known as the current transfer ratio. This is a measure of how well a transistor can control current through its collector.

ZXTP2013ZTA is a P-N-P type transistor. It is composed of three layers: the collector, emitter and a base layer. The collector and emitter layers are made of heavily doped semiconductors and the base layer is made of lightly doped material. The collector and emitter layers together form the P-type material and the base layer forms the N-type material. When an electric current is applied at the base, the electrons from the P-type material flow towards the N-type material and recombine with the holes from the N-type material, creating a thin inversion layer, which is known as the space charge region. This layer acts as a barrier and prevents further current from flowing from the collector to the emitter.

ZXTP2013ZTA is commonly used in circuits that require high currents, such as power amplifiers and switching circuits. Specifically, ZXTP2013ZTA can be used in audio amplifiers and converters, motor controllers, and motor speed control circuits, as well as in power switch circuits and power supplies. The high current gain and low turn-on voltage makes it especially suitable for high frequency switching applications. Due to its high breakdown voltage, it can also be used in circuits that require high voltage operation, such as voltage regulators and high voltage switching circuits.

In general, ZXTP2013ZTA is a reliable high power transistor that can be used in a wide range of applications. Its features, such as its high current gain, low turn-on voltage, and high breakdown voltage make it an ideal choice for circuits that require high power. Moreover, its compatibility with a variety of circuits makes it suitable for a variety of applications.

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