ZXTP19100CFFTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTP19100CFFTR-ND |
Manufacturer Part#: |
ZXTP19100CFFTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 100V 2A SOT23F-3 |
More Detail: | Bipolar (BJT) Transistor PNP 100V 2A 142MHz 1.5W S... |
DataSheet: | ZXTP19100CFFTA Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 275mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 1.5W |
Frequency - Transition: | 142MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-3 Flat Leads |
Supplier Device Package: | SOT-23F |
Base Part Number: | ZXTP19100C |
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The ZXTP19100CFFTA is a single-level electrical transistor that belongs to the Bipolar Junction Transistor (BJT) family. The ZXTP19100CFFTA offers superior performance due to its two-level, symmetric structure and high-speed switching. It is used in high frequency applications, such as RF and microwave circuits.
The ZXTP19100CFFTA is composed of three sections: collector, base, and emitter. The base is the controlling element and is responsible for the level of current that flows between the collector and emitter. The collector-base junction is made of p-type silicon and the emitter-base junction is n-type silicon. The ZXTP19100CFFTA is designed to have a low power dissipation when compared to conventional BJTs.
The ZXTP19100CFFTA has various application fields. It is used in radio frequency amplifiers, high-speed signal processing circuits, relay drivers, power switches, and DC/DC converters. The ZXTP19100CFFTA is an ideal choice for applications that require high-speed switching and low power dissipation. Additionally, it is often chosen for its high-frequency performance.
The working principle of the ZXTP19100CFFTA is based on its bipolar characteristics. When the base-emitter voltage is increased, the current from the collector to the emitter increases, making the device act as a amplifier. The gain or current gain is determined by the ratio of the collector current to the base current. When the base current is kept low, a higher current gain is achieved. Furthermore, when the collector voltage is increased, the current between the collector and emitter decreases, making it act as a switch.
The ZXTP19100CFFTA is a versatile device that is used in many applications. It is ideal for high frequency and switching applications due to its low power consumption, high speed switching, and superior performance. Additionally, its two-level, symmetric structure allows for high output power levels while maintaining signal purity. As a result, the ZXTP19100CFFTA is a reliable device that is sure to deliver performance and stability.
The specific data is subject to PDF, and the above content is for reference
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