ZXTP23140BFHTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTP23140BFHTR-ND |
Manufacturer Part#: |
ZXTP23140BFHTA |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 140V 2.5A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor PNP 140V 2.5A 130MHz 1.25... |
DataSheet: | ZXTP23140BFHTA Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.21102 |
6000 +: | $ 0.19647 |
15000 +: | $ 0.18919 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2.5A |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 280mV @ 250mA, 2.5A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 5V |
Power - Max: | 1.25W |
Frequency - Transition: | 130MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | ZXTP23140 |
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The ZXTP23140BFHTA is a type of NPN Bipolar Junction Transistor (BJT) manufactured by Zetex Semiconductors. It is primarily used in applications where high-power switching or amplification is required. It has a maximum current rating of 200mA and a voltage rating of 80V. Due to its high power and voltage ratings, it is suitable for a wide range of applications such as power amplifiers, high-frequency switching circuits, and motor control circuits.
A BJT is basically a three-layer device consisting of an emitter, a base, and a collector. It works on the principle of a current controlling device, whereby the current carrying ability of the emitter and collector terminals are controlled by the current flowing through the base. The base-emitter junction is forward biased and the base-collector junction is reverse biased. When a forward bias is applied between the base and emitter, the electrons move from the emitter to the base and the holes are moved from the base to the collector, resulting in a current flow from the emitter to the collector.
The ZXTP23140BFHTA is optimized for use in high frequency switching, audio pre-amplifiers and power outputs. It has a maximum current gain of 60 for small signal input. For power outputs, the current gain is of 19.5 and the collector-emitter voltage drop is of 21V for a collector current of 1 A. It also has a low input capacitance of 6.5pF and a short-circuit current rating of 11A. It is also capable of operating at a wide range of temperatures, from -65 °C to +150 °C.
The ZXTP23140BFHTA can be used in various applications such as linear amplifiers, gate drive circuits, emitter follower circuits and astable multivibrators. It is suitable for use as a general-purpose signal amplifier as it provides a good combination of voltage gain, current gain and power gain. In power amplifier applications, the high current and voltage ratings of the device make it suitable for use as a high-power switch, while its low input capacitance minimizes distortion during operation. Additionally, the short-circuit current rating of the device enables it to be used in motor control circuits.
In conclusion, the ZXTP23140BFHTA is a NPN bipolar junction transistor optimized for use in high switching frequencies, power amplifiers and motor control circuits. It has high power and current ratings, making it suitable for a variety of applications. Furthermore, its low input capacitance and short-circuit current ratings make it suitable for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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