ZXTP2008ZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTP2008ZTR-ND |
Manufacturer Part#: |
ZXTP2008ZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 30V 5.5A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 5.5A 110MHz 2.1W ... |
DataSheet: | ZXTP2008ZTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5.5A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 175mV @ 500mA, 5.5A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 1V |
Power - Max: | 2.1W |
Frequency - Transition: | 110MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZXTP2008 |
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The ZXTP2008ZTA bipolar junction transistors (BJT) is an advanced single transistor designed for high frequency, high temperature and high current applications. It has excellent performance and reliability advantages, which make it the choice for many applications. This article will discuss the application field and working principle of the ZXTP2008ZTA.
The ZXTP2008ZTA is a single, 3-pin, N-P-N BJT, made using high-efficiency, high-performance materials. It has a maximum collector-base breakdown voltage of 8 V, which makes it well-suited for a wide range of applications. This transistor has a high collector current of up to 200 mA, which is perfect for its intended use as an amplifier in circuits that require strong output power. It also has a high switching frequency, allowing for shorter pulse widths and higher frequency operation in various applications.
The ZXTP2008ZTA is widely used in radio frequency (RF) and microwave applications, such as amplifying signals for TV, radio, and wireless communication systems. It can be used in pre-amplifier circuits, as it has high gain and linearity. It can also provide power amplification in radio frequency-modulated transmitters, making it suitable for modern mobile radio systems. Furthermore, it is vastly used in power amplifier circuits, as its high drain current enables it to power high-power transmitter and receiver circuits.
In terms of the working principle, the ZXTP2008ZTA is a current-controlled device. It is composed of three main layers: an emitter, a base, and a collector. The emitter is the layer which acts as the input of the transistor, while the collector layer is the output. The base is the layer that acts as a regulating point between the emitter and the collector. When a current passes through the base, it creates a voltage potential that controls the current from the emitter to the collector. A small current applied to the base can be used to switch on or off larger currents from the collector to the emitter.
The ZXTP2008ZTA is designed to provide increased current and voltage carrying capacity, a higher switching frequency, and increased stability and reliability. Its robust design and efficient materials make it suitable for a wide variety of applications, and its excellent performance capabilities make it an ideal choice for any circuit that requires a high power, high frequency solution.
The specific data is subject to PDF, and the above content is for reference
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