ZXTP4003GTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTP4003GTA-ND |
Manufacturer Part#: |
ZXTP4003GTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 100V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 100V 1A 2W Surface M... |
DataSheet: | ZXTP4003GTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 200mV |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
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The ZXTP4003GTA is a single bipolar junction transistor (BJT) device that has found many applications in electronic circuits. It is widely used in the design of power supplies, amplifiers, switches, oscillators and circuitry for controlling speed and voltage. The transistor’s operation relies on the flow of minority carriers between the base and collector region.
The ZXTP4003GTA has a maximum current gain (hFE) of 250 and a minimum beta of 25 at the recommended operating temperature of 25 degrees Celsius. It is designed for use in both AC and DC circuits. The bandwidth of this device covers the range of 150 MHz – 600 MHz, making it a suitable choice for high frequency applications.
The ZXTP4003GTA has a maximum collector-base voltage (Vcb) of 60 Volts, with the reverse breakdown voltage (Vbr) being equal to or greater than 15 Volts. Its collector-emitter voltage (Vce) is rated at 40 Volts and the forward voltage drop (Vf) is equal to or greater than 1.5 Volts. The ON-state resistance (Ron) of this device is rated at a maximum of 1.2 Ohms and its off-state resistance (Roff) max is 0.2 Ohms.
The ZXTP4003GTA is designed to provide high surge capability with a maximum collector current up to 40 Amps. Its power rating (Pd) is rated at 36 Watts. The junction-to-ambient thermal resistance (Rja) is rated at 10 degrees Celsius per Watt. This device has a reverse transit time (tr) ranging from 10 to 400 nanoseconds, making it ideal for rapid switching applications.
The working principle of the ZXTP4003GTA is based on the flow of minority carriers, which are electrons and holes, between the base and collector region. When a voltage is applied across the collector and emitter of the transistor, the electrons flows from the emitter to the base, creating a depletion region. This process is known as forward biasing, where the electrons are forced across the depletion region. The electrons then move through the collector, causing current gain within the transistor.
This bipolar junction transistor has found uses in a variety of applications. It is popularly used in power supplies, which often require temperature stability and high current abilities. It is also used in amplifiers, switch circuits for controlling speed, voltage and frequency, and oscillators in communication circuits.
In summary, the ZXTP4003GTA is a single bipolar junction transistor device that is designed for use in AC and DC circuits. It has a wide bandwidth, high current gain and surge capability. The device is ideal for applications that require temperature stability, high current and rapid switching.
The specific data is subject to PDF, and the above content is for reference
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