ZXTP5240F-7 Allicdata Electronics

ZXTP5240F-7 Discrete Semiconductor Products

Allicdata Part #:

ZXTP5240F-7DITR-ND

Manufacturer Part#:

ZXTP5240F-7

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: SS MID-PERF TRANSISTOR SSOT23
More Detail: Bipolar (BJT) Transistor PNP 40V 2A 100MHz 730mW S...
DataSheet: ZXTP5240F-7 datasheetZXTP5240F-7 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06237
6000 +: $ 0.05891
15000 +: $ 0.05371
30000 +: $ 0.05024
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 730mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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  • Introduction

The ZXTP5240F-7 is a bipolar junction transistor (BJT) which is manufactured for use as a single transistor. It is designed for applications in which it is exposed to extreme temperatures, including operation at temperatures up to 175°C and storage temperatures up to 200°C. The device offers superior performance and is available in a range of footprints, including TO-220, SOT-227 and SOT-223.

  • Performance

The ZXTP5240F-7 has an enhanced design to offer superior performance in extreme temperatures. It has a continuous collector current of 5A, peak collector current of 25A, volts at the collector-emitter breakdown voltage (BVceo) of 250V, collector-emitter saturation voltage of 500mV at 5A, and power dissipation of 33W at 25°C. It also has a maximum safe operating area (SOA) of 25A/125V.

  • Features

The ZXTP5240F-7 has a variety of features. It is designed with a wide bandgap technology, allowing it to operate at higher temperatures than traditional devices. It is also a low-noise device, reducing the amount of unwanted background noise when in operation. This makes it especially suitable for applications in which noise-reduction is important. It features an optimized package size which provides a high level of integration while maintaining a low on-resistance profile.

  • Applications

The ZXTP5240F-7 is well-suited for a number of applications. It can be used in power amplifier circuits, DC-DC converter circuits, motor control circuits, and automotive electronics. It is also suitable for high-speed switching and motor control applications. This device can be used in high-efficiency power electronics for industrial and automotive applications.

  • Working Principle

The ZXTP5240F-7 is based on the bipolar junction transistor (BJT) switching principle. This is a three-terminal device in which two terminals (the collector and emitter) are connected to two sides of a base junction. When a voltage is applied to the base terminal, it produces a current in the collector-emitter circuit which is proportional to the base-emitter voltage. This transistor can be used as a switch or as an amplifier, depending on the application.

  • Conclusion

The ZXTP5240F-7 is a bipolar junction transistor (BJT) which is designed for extreme temperature applications up to 175°C and has a range of features. It has an enhanced design to offer superior performance in extreme temperatures and can be used in a number of applications such as power amplifiers and motor control circuits. The device is based on the BJT switching principle and can be used as a switch or amplifier.

The specific data is subject to PDF, and the above content is for reference

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