| Allicdata Part #: | SIHF5N50D-E3-ND |
| Manufacturer Part#: |
SIHF5N50D-E3 |
| Price: | $ 1.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 5.3A TO220 FLPK |
| More Detail: | N-Channel 500V 5.3A (Tc) 30W (Tc) Through Hole TO-... |
| DataSheet: |  SIHF5N50D-E3 Datasheet/PDF |
| Quantity: | 8 |
| 1 +: | $ 1.00170 |
| 10 +: | $ 0.88704 |
| 100 +: | $ 0.70113 |
| 500 +: | $ 0.54374 |
| 1000 +: | $ 0.42927 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The SIHF5N50D-E3 is part of a family of high-power N-channel MOSFETs designed for applications in the primary switching power supply market. This family of devices is rated for up to 200 volts and 5 amperes, and provides very low on-resistance for very low losses in switching mode power supplies. The SIHF5N50D-E3 is the highest current device in the family and is the most popular choice for applications in the switching power supply segment.A MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of field-effect transistor (FET) with very high input impedance and output resistance. The transistor consists of a source, drain, and gate; and is composed of a thin oxide layer in between a metal gate electrode and silicon substrate. When a voltage between the source and drain terminals is applied, a conducting channel is formed beneath the gate. By varying the voltage at the gate, the conductivity of the channel can be varied, allowing it to act as an amplifier or a switch.The SiHF5N50D-E3 has an RDS(on) of 0.45 ohms, which is the channel resistance when it is turned on. This low RDS(on) helps reduce power losses in efficient switching power supplies. The device also features a very low gate charge (Qg) of 14nC which helps reduce switching losses. It has an ID of 5A at 25° C, and the maximum current it can provide is 8A. This current limit and the low RDS(on) ensure that the transistor does not overheat or cause damage.The SIHF5N50D-E3 is a popular choice for applications such as low and medium power components in power converters, inverters, phase shift controllers, switching power supplies and other applications. It is especially suitable for high efficiency power converters because of its extremely low RDS(on) and low gate charge. It is also suitable for high frequency switching supplies and can handle high temperature and high voltage demands.The MOSFET is also suitable for other applications due to its high input impedance and low gate voltage. This means it is ideal for designs where low gate drive power is necessary, such as gate drivers for other MOSFETs or for embedded systems. The device is also suitable for audio power stages, as it has excellent thermal capabilities and low gate charge.In summary, the SIHF5N50D-E3 is a high-performance N-Channel power MOSFET with very low on-resistance, low gate charge and high current limit. It is especially suitable for high efficiency switching power supplies, high frequency switching supplies and applications where low gate drive power is necessary. It is also suitable for audio power stages and embedded systems.
The specific data is subject to PDF, and the above content is for reference
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