IPA50R190CEXKSA2 Allicdata Electronics
Allicdata Part #:

IPA50R190CEXKSA2-ND

Manufacturer Part#:

IPA50R190CEXKSA2

Price: $ 1.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 18.5A TO220FP
More Detail: N-Channel 500V 18.5A (Tc) 32W (Tc) Through Hole PG...
DataSheet: IPA50R190CEXKSA2 datasheetIPA50R190CEXKSA2 Datasheet/PDF
Quantity: 1000
1 +: $ 1.34820
10 +: $ 1.21590
100 +: $ 0.97726
500 +: $ 0.76010
1000 +: $ 0.62979
Stock 1000Can Ship Immediately
$ 1.48
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1137pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47.2nC @ 10V
Series: CoolMOS™ CE
Rds On (Max) @ Id, Vgs: 190 mOhm @ 6.2A, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The IPA50R190CEXKSA2 is a high-speed, low-on-resistance MOSFET designed for automotive applications. It is an enhancement-mode, logic-level, N-channel device with an on-resistance rating of 0.29Ω. This device is popularly used in DC-DC converters, power management solutions, power stages, in-vehicle networks and automotive lamps.

The device is composed mainly of a depletion-type MOSFET structure along with a parasitic diode. As with any MOSFET, the IPA50R190CEXKSA2 is configured as a voltage-controlled switch, controlling a current by applying a voltage of the correct polarity in order to induce a MOSFET channel. For example, when a voltage with a positive polarity is applied to the MOSFET’s gate, an inversion area forms and a conductive path is established from the source to drain.

The gate of the MOSFET has an input impedance of approximately 10⁹ Ohms, allowing for very low gate drive current. Because its channel is designed to configure above its threshold voltage, the channel may be turned on and off with logic-level internally. This is why this type of MOSFET is referred to as a logic-level device. The threshold voltage is typically between 2-4 volts, and its on-channel resistance is comparatively low. The parasitic diode within the MOSFET circuit helps reduce surge current when the device is switched on and off.

The ultra-low on-resistance of the IPA50R190CEXKSA2 makes it ideal for automotive applications where current consumption needs to be kept to a minimum. Its low gate drive current, along with its ability to control large currents once the channel is turn on, make it a suitable choice for DC-DC converters and power management circuits. In addition, its small size and low power consumption make it optimal for automotive lighting applications. By connecting the circuit to the vehicle’s battery, the MOSFET can be used for high-efficiency dimming.

Overall, the IPA50R190CEXKSA2 MOSFET is a high-speed, low-power device capable of controlling high currents. It is suitable for many automotive applications, such as DC-DC converters and power management circuits, as well as automotive lighting. Its low on-resistance and ability to configure with logic levels make it an optimal choice for these applications.

The specific data is subject to PDF, and the above content is for reference

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