| Allicdata Part #: | SIHF7N60E-E3-ND |
| Manufacturer Part#: |
SIHF7N60E-E3 |
| Price: | $ 1.92 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 7A TO-220 |
| More Detail: | N-Channel 600V 7A (Tc) 31W (Tc) Through Hole TO-22... |
| DataSheet: | SIHF7N60E-E3 Datasheet/PDF |
| Quantity: | 205 |
| 1 +: | $ 1.73880 |
| 10 +: | $ 1.56996 |
| 100 +: | $ 1.26170 |
| 500 +: | $ 0.98134 |
| 1000 +: | $ 0.81311 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 31W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SIHF7N60E-E3 is a type of Field Effect Transistor (FET), specifically a MOSFET (Metal Oxide Semiconductor field effect transistor) type. This type of transistor requires a gate voltage in order to control the current flowing between the source and drain terminals. The SIHF7N60E-E3 is a single transistor, and it is designed for use in high frequency and low voltage power applications.
This particular device is an enhancement-mode MOSFET and it is designed to operate in both high and low power applications. It is characterized by low on-state resistance (RDS(ON)), high current density (IDxRDS), and fast power-switching performance. The device comes in a TO-220 package and is available in multiple channel configurations, allowing for a wide range of applications.
The SIHF7N60E-E3 is perfect for applications such as motor control, LED lighting, high speed switching, and can also be used in power supply circuits where current switching is needed. The device is rated for a maximum drain-source voltage of 600V and peak drain current of 190A. The device has a reverse breakdown voltage of 600V and a maximum drain-source current of 7A.
The working principle of the SIHF7N60E-E3 is quite simple. It is a voltage-controlled device, meaning that the current flow through it is dependent on the voltage applied to its gate terminal. When the gate voltage is below the threshold value, the FET is off and no current flows through it. However, when the gate voltage exceeds the threshold value, the FET turns on and current flows freely between the source and drain terminals.
The SIHF7N60E-E3 is also qualified for automotive applications, with its fast switching speed, low on-state resistance, and can handle up to a maximum temperature of 175°C. In automotive applications, the device can be used for low-voltage power switching circuits, power amplifiers, and motor control.
In conclusion, the SIHF7N60E-E3 is a versatile and reliable power semiconductor device. The device is perfect for low voltage, high frequency, and low power applications, and can handle up to a maximum temperature of 175°C. Its fast switching speed and low on-state resistance make it suitable for a wide range of applications, including motor control, LED lighting, high speed switching, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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SIHF7N60E-E3 Datasheet/PDF