SIHA15N65E-GE3

Gate Charge (Qg) (Max) @ Vgs:	96nC @ 10V
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220 Full Pack
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	34W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2460pF @ 100V
Vgs (Max):	±30V
Series:	E
Vgs(th) (Max) @ Id:	4V @ 250µA
Rds On (Max) @ Id, Vgs:	280 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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Introduction

SIHA15N65E-GE3 is a N-channel enhancement-mode insulated-gate Field Effect Transistor (IGFET) module which utilizes advanced trench technology to provide excellent RDS(ON) with low gate charge. This part also features extremely balanced Qg, Qgd and Qgs for improved switching performance. The SIHA15N65E-GE3 is a general purpose device which is suitable for automotive, commercial, telecommunication and other applications requiring low thermal resistance and high power dissipation capabilities.

Application Field

The SIHA15N65E-GE3 is an ideal choice for motor control applications, such as electric vehicles, on-board chargers, power management and inverters. It is also suitable for a variety of other applications such as motor drives, power switching, and power conversion.The SIHA15N65E-GE3 is built with an advanced trench technology that ensures a low thermal resistance without compromising optimal conduction performance. It offers excellent switching performance and power efficiency, while operating under harsh environmental conditions.

Working Principle

The SIHA15N65E-GE3 operates in the enhancement-mode which results in significant improvements in efficiency and system-level robustness. The device operates in two main modes: conductive and non-conductive. When the gate voltage is applied, the transistor is in the conductive mode which is the “on” state. When the gate voltage is reduced to zero, the transistor is in the non-conductive mode which is the “off” state.The SIHA15N65E-GE3 is built with an advanced trench technology which reduces gate charge and switching losses significantly compared to standard MOSFET devices. It also features an optimized gate drive structure which ensures low EMI and fast switching response.The SIHA15N65E-GE3 utilizes P-Channel and N-Channel transistors to provide superior power dissipation and switching performances. The P-Channel transistor is used for the body diode function and the N-Channel for the enhancement-mode. The body diode junction formed by the P-Channel and N-Channel transistors ensures fast switch-on and switch-off characteristics, providing superior power efficiency.Moreover, the SIHA15N65E-GE3 also features extremely low power dissipation and low RDS(ON) offering superior thermal performance. The device offers a wide range of operation temperatures ranging from -55°C to 175°C making it suitable for a number of commercial, industrial, and automotive applications.In conclusion, the SIHA15N65E-GE3 is designed to provide exceptional switching performance, high efficiency, and superior thermal resistance in a variety of automotive, commercial and telecommunication applications. The device utilizes an advanced trench technology with low gate charge and low switching losses. It also features extremely low power dissipation and low RDS(ON) offering superior thermal performance. The SIHA15N65E-GE3 is suitable for a variety of applications including motor control, power switching, and power conversion.

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