IPA80R360P7XKSA1 Allicdata Electronics
Allicdata Part #:

IPA80R360P7XKSA1-ND

Manufacturer Part#:

IPA80R360P7XKSA1

Price: $ 2.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CHANNEL 800V 13A TO220
More Detail: N-Channel 800V 13A (Tc) 30W (Tc) Through Hole PG-T...
DataSheet: IPA80R360P7XKSA1 datasheetIPA80R360P7XKSA1 Datasheet/PDF
Quantity: 469
1 +: $ 1.87740
10 +: $ 1.69407
100 +: $ 1.36149
500 +: $ 1.05893
1000 +: $ 0.87740
Stock 469Can Ship Immediately
$ 2.07
Specifications
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
Vgs (Max): ±20V
Series: CoolMOS™ P7
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The IPA80R360P7XKSA1 transistors belong to the family of Field-Effect Transistors (FETs), more specifically it is a single Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This type of transistor provides various means to control an electrical signal with huge flexibility. It uses the basic working principle of a FET: the gate voltage is used to control the flow of current between the source and the drain. The current flowing through the device is determined by the value of the gate voltage.

The particularity of this type of transistor is that it is designed for precise requirements. This is why its application fields are very specific, such as in power electronics, where it is used to both amplify an electrical current and act as an on/off switch. It is widely used for the switching of loads, the generation and control of PWM signals, the implementation of DC/DC converters, etc. Outside the domain of power electronics, its application fields can include roles as an interface device, a CMOS Logic Gate, an RF amplifier, a light sensor, etc.

In terms of its physical characteristics, the IPA80R360P7XKSA1 is a very small component, measuring 2.77mm x 2.77mm and can only handle 60V and up to 1.2A. Its gate threshold voltage is 2.2V, which indicates that 2.2V on the gate is needed to begin the flow of current between the source and drain. Its drain-gate capacitance or input capacitance is lower than that of other FETs, specifically measuring 200pF. Furthermore, this particular type of transistor is equipped with a built-in diode connected between the drain and source.

In terms of its structure, the IPA80R360P7XKSA1 is made up of an insulated gate and a thin N-channel that allows the flow of electrons from the source to the drain. The principle of operation of this type of MOSFET implies that, when a positive voltage is applied to the gate, it attracts electrons from the N-channel and thus forms an electric field. As a result, this causes a decrease of the resistance between the source and the drain and allows for current to flow. If a negative voltage is instead applied to the gate, the electric field will be destroyed, and the resistance between source and drain will increase and the current flow will be blocked. Therefore, it can be said that this transistor works in two modes: the on mode, where the gate is positively charged and current flows, and the off mode, where the gate is negatively charged and the current is blocked.

Overall, the IPA80R360P7XKSA1 has a wide variety of application fields and is equipped with unique features that make it suitable for precise settings. Thanks to its principle of operation, it can be used both as a power amplifier and as an on/off switch, depending on the type of voltage applied to the gate. It is therefore highly versatile when it comes to making suitable settings for different electronics.

The specific data is subject to PDF, and the above content is for reference

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