SIHF12N60E-E3 Allicdata Electronics
Allicdata Part #:

SIHF12N60E-E3-ND

Manufacturer Part#:

SIHF12N60E-E3

Price: $ 2.24
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 12A TO220 FULLP
More Detail: N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-2...
DataSheet: SIHF12N60E-E3 datasheetSIHF12N60E-E3 Datasheet/PDF
Quantity: 228
1 +: $ 2.24000
10 +: $ 2.17280
100 +: $ 2.12800
1000 +: $ 2.08320
10000 +: $ 2.01600
Stock 228Can Ship Immediately
$ 2.24
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The SIHF12N60E-E3 transistor is a N-Channel MOSFET (short for metal-oxide-semiconductor field-effect transistor) from Infineon Technologies. It is a low-voltage MOSFET with a Vds (drain to source breakdown voltage) of 600V, a RDSon(max) (drain to source on-resistance) of 0.12 Ω and a Id (continuous drain current) of 12A. It is also an "easy-to-use" MOSFET that includes fast switching speed, high commutation performance and high avalanche energy as some of its features.

The SIHF12N60E-E3 transistor is mainly used in automotive and industrial applications, such as motor controllers, inverters and converters. It is suitable for environments that require high efficiency and low voltage operation. Additionally, the SIHF12N60E-E3 transistor is constructed with a robust package which allows for reliable operation in extreme temperatures and shock conditions.

The most important part of any MOSFET is its working principle. The SIHF12N60E-E3 transistor operates according to the gate to source voltage (VGS). When VGS is greater than the threshold voltage, the MOSFET is turned on. When VGS is less than the threshold voltage, the MOSFET is turned off. The amount of current that is able to flow through the MOSFET is also determined by the value of VGS, as the current through the MOSFET will be higher or lower depending on how much the VGS is above threshold. The thermal noise of the MOSFET is also taken into considerations, as noise must be kept as low as possible in order to ensure low power consumption and high switching speed.

The SIHF12N60E-E3 transistor has additional features, such as self-protection from over-voltage transients and short-circuit protection. The self-protection feature protects the device from damage due to transient voltage conditions, and the short-circuit protection feature ensures that the output current remains at a safe level in the event of a short circuit. Finally, the SIHF12N60E-E3 transistor has an ESD protection feature, which helps to protect the device from electrostatic discharge damage. All these features make the SIHF12N60E-E3 transistor extremely reliable and ideal for applications in harsh conditions.

In conclusion, the SIHF12N60E-E3 transistor is a low-voltage N-Channel MOSFET from Infineon Technologies that is mainly used in automotive and industrial applications such as motor controllers, inverters and converters. Its features include fast switching speed, high commutation performance and high avalanche energy. Furthermore, it has additional features such as self-protection from over-voltage transients and short-circuit protection, as well as ESD protection. All these features help to ensure that the SIHF12N60E-E3 transistor is an high-performance, reliable and durable device for harsh applications.

The specific data is subject to PDF, and the above content is for reference

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