| Allicdata Part #: | IPA65R1K5CEXKSA1-ND |
| Manufacturer Part#: |
IPA65R1K5CEXKSA1 |
| Price: | $ 0.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V TO220-3 |
| More Detail: | N-Channel 650V 5.2A (Tc) 30W (Tc) Through Hole PG-... |
| DataSheet: |  IPA65R1K5CEXKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 0.35997 |
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 130µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | PG-TO220 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.2A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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IPA65R1K5CEXKSA1 is a field effect transistor (FET) and is one of the best performing single junction FETs available in the market today. It has an extremely low on-resistance and fast switching time and is compatible with modern design approaches and systems. In this article, we will discuss the application field and working principle of IPA65R1K5CEXKSA1.
What is a FET?
A FET is a three-terminal semiconductor device that is used to amplify or switch electrical signals and power. The FET is a voltage-controlled device that works similar to a switch. It consists of a source, gate, and drain with the source and drain being connected to two wires, and the gate being connected to a third wire.When a voltage is applied to the gate, the control terminal creates an inversion layer in the semiconductor between the source and drain. This inversion layer forms an electrical connection between the source and drain and thereby, current can flow through the FET. The transistor can be controlled by varying the voltage at the gate, and can be used to switch current on and off.Application Field of IPA65R1K5CEXKSA1
The IPA65R1K5CEXKSA1 is widely used in many applications such as automotive, home entertainment, medical, industrial, and power management. The FET is ideal for use in high-side switching applications. It is often used in automotive circuits as a switch between the power supply and electrical components. The FET also finds use in motor control applications such as controlling the speed of the motor, controlling current direction, and providing protection against motor overloads.The IPA65R1K5CEXKSA1 is also widely used for low side switching applications. It can be used for industrial applications such as voltage monitoring and load transmission. The FET can also be used to provide protection from voltage spikes in the power supply. The IPA65R1K5CEXKSA1 is also used in home entertainment systems as a switch between the power supply and audio components.Working Principle of IPA65R1K5CEXKSA1
The working principle of IPA65R1K5CEXKSA1 can be described as follows. The FET has three terminals—source, drain, and gate. The source and the drain are connected to two wires, and the gate is connected to a third wire. The source and the drain act as sources and drains of electric charge, while the gate acts as an insulated plug that controls the current between the other two terminals. When a voltage is applied to the gate, the electric charge forms an inversion layer in the semiconductor between the source and drain. This inversion layer acts as a channel for current to flow between the source and drain. The degree of current flow is proportional to the voltage applied to the gate, thus allowing the current through the FET to be controlled by varying the voltage applied to the gate.Additionally, the IPA65R1K5CEXKSA1 has a very low on-resistance, which allows the FET to switch current faster, making it ideal for high-side switching applications.Conclusion
The IPA65R1K5CEXKSA1 is a field effect transistor (FET) and is one of the best performing single junction FETs available in the market today. It has an extremely low on-resistance and fast switching time, making it ideal for use in many applications, such as automotive, home entertainment, medical, industrial, and power management. The working principle of IPA65R1K5CEXKSA1 can be described as follows. When a voltage is applied to the gate, the electric charge forms an inversion layer in the semiconductor between the source and drain. This inversion layer acts as a channel for current to flow between the source and drain, and the degree of current flow is proportional to the voltage applied to the gate. Thus, the current through the FET can be controlled by varying the voltage applied to the gate.The specific data is subject to PDF, and the above content is for reference
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