Cap alum poly 47uf 20% 16v smd - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
HCT7000M-ND	HCT7000M	TT Electronics/Optek Technology	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SMD Package / Case: 3-SMD, No Lead	1000 Order	100+: $13.4191
HCT7000MTXV-ND	HCT7000MTXV	TT Electronics/Optek Technology	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SMD Package / Case: 3-SMD, No Lead	1000 Order	100+: $22.1959
AUIRLZ44ZL-ND	AUIRLZ44ZL	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 16V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
AUIRLZ44ZSTRL-N D	AUIRLZ44ZSTRL	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 16V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount	1000 Order	1+: $0
AUIRLZ44ZS-ND	AUIRLZ44ZS	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 16V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount	1000 Order	1+: $0
FDZ4670TR-ND	FDZ4670	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 20-FLFBGA (3.5x4.0) Package / Case: 20-FLFBGA (30 pos)	1000 Order	1+: $0
FDZ4670STR-ND	FDZ4670S	ON Semiconductor	View more Series: PowerTrench, SyncFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 20-FLFBGA (3.5x4.0) Package / Case: 20-FLFBGA (30 pos)	1000 Order	1+: $0
NTMSD2P102R2SG- ND	NTMSD2P102R2SG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
NTMSD2P102R2-ND	NTMSD2P102R2	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
SI3139K-TPMSTR- ND	SI3139K-TP	Micro Commercial Co	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 660mA Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 950 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 800mV @ 250A Vgs (Max): 6V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V Power Dissipation (Max): 150mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	1000 Order	8000+: $0.0496
HAF1002-90STL-E -ND	HAF1002-90STL-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Vgs (Max): +3V, -16V Power Dissipation (Max): 50W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	1000 Order	1+: $0
BUK9MGP-55PTS,5 18-ND	BUK9MGP-55PTS,5 18	Nexperia USA Inc.	View more Series: TrenchPLUS Part Status: Last Time Buy FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 16.9A (Tc), 9.16A (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V, 22.6 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 5V, 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5178pF @ 25V, 2315pF @ 25V Power - Max: 5.2W (Tc), 3.9W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	1000 Order	1+: $0
DMP2045UFY4-7DI TR-ND	DMP2045UFY4-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Preliminary FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V Power Dissipation (Max): 670mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN2015-3 Package / Case: 3-XDFN	1000 Order	1+: $0
DMP2104LPDITR-N D	DMP2104LP-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 16V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1411 (1.4x1.1) Package / Case: 3-XDFN	54000 Order	--
497-4322-2-ND	STB16NF06LT4	STMicroelectronics	View more Series: STripFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	3000 Order	--
HUF76629D3STTR- ND	HUF76629D3ST	ON Semiconductor	View more Series: UltraFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	2500+: $0.4916
1727-5511-2-ND	BUK6228-55C,118	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.2nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	10000+: $0.1822
IRL2910STRL-ND	IRL2910STRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRL1104LPBF-ND	IRL1104LPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
HUFA76419D3-ND	HUFA76419D3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27.5nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Power Dissipation (Max): 75W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
IPD90P03P4L04AT MA1TR-ND	IPD90P03P4L04AT MA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 2V @ 253A Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): +5V, -16V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Power Dissipation (Max): 137W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SI7868ADP-T1-GE 3-ND	SI7868ADP-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.25 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	3000+: $1.561
DMTH6009LK3-13D ITR-ND	DMTH6009LK3-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 14.2A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3347
SIDR140DP-T1-GE 3TR-ND	SIDR140DP-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 79A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.67 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 8150pF @ 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8DC Package / Case: PowerPAK SO-8	1000 Order	3000+: $0.779
IPD50N06S4L08AT MA2-ND	IPD50N06S4L08AT MA2	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 35A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: IPD50N06	2500 Order	1+: $29.55
NVMFS6B14NLT3G- ND	NVMFS6B14NLT3G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	5000+: $0.2906
IRF7811-ND	IRF7811	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 16V Power Dissipation (Max): 3.5W (Ta) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRLU014NPBF-ND	IRLU014NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V Power Dissipation (Max): 28W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IRLR024ZPBF-ND	IRLR024ZPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
DMP2123LDITR-ND	DMP2123L-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	84000 Order	--
SIR638DP-T1-RE3 -ND	SIR638DP-T1-RE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.88 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 20V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
IRLI2910PBF-ND	IRLI2910PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	8466 Order	--
IRLR3114ZPBF-ND	IRLR3114ZPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	300 Order	--
SIR112DP-T1-RE3 TR-ND	SIR112DP-T1-RE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 37.6A (Ta), 133A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.96 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	3000+: $0.404
DMG1013TQ-7-ND	DMG1013TQ-7	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 460mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 700 mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V Vgs (Max): 6V Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Power Dissipation (Max): 270mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	1000 Order	--
IRLR8103VTRL-ND	IRLR8103VTRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Power Dissipation (Max): 115W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
64-4051-ND	64-4051	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPI100N06S3L-03 IN-ND	IPI100N06S3L-03	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.2V @ 230A Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
NVMFS6B03NWFT1G -ND	NVMFS6B03NWFT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	1500+: $2.196
SI4632DY-T1-E3T R-ND	SI4632DY-T1-E3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 11175pF @ 15V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.8411

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