Allicdata Part #: | DMP2104LPDITR-ND |
Manufacturer Part#: |
DMP2104LP-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 1.5A 3-DFN |
More Detail: | P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount 3... |
DataSheet: | DMP2104LP-7 Datasheet/PDF |
Quantity: | 54000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 3-XDFN |
Supplier Device Package: | 3-DFN1411 (1.4x1.1) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 16V |
Vgs (Max): | ±12V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 950mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
The DMP2104LP-7 is an advanced and efficient field effect transistor (FET). It has two different type of structures, which are N-channel and P-channel, and is typically used in applications where ultra-low RDS(on) and low-power consumption are key metrics. In this article, we will be discussing the application field and working principle of the DMP2104LP-7.
Application field and Working Principle
The DMP2104LP-7 FET has a unique feature that makes it suitable for many different applications. It has an ultra-low RDS(on), which is the resistance of the FET in the on state. This low RDS(on) allows the FET to be used in applications where a low operating voltage is needed, such as in power converters and low-voltage signal conditioning. It also has a low threshold voltage, which helps when controlling the FET in applications where a high switching frequency is required.
The DMP2104LP-7 also has a low On- Resistance(RDS(on)) and low-power consumption. This makes it ideal for applications where a minimal amount of power is needed. It is also capable of controlling high-current loads while operating within a small size, allowing it to be used in space-constrained applications such as microcontrollers and embedded systems.
The working principle of the DMP2104LP-7 is based on its structure. The N-channel and P-channel of the FET each have a source, drain, and gate. A voltage applied to the gate of the FET affects the resistance of the channel, allowing current to flow between the source and drain. When the voltage Vgs is increased, the FET turns on and the resistance (RDS(on)) decreases. When the voltage Vgs is decreased, the FET turns off and the resistance (RDS(on)) increases.
The DMP2104LP-7 also features an integrated parasitic diode protection. This diode protection helps prevent current from flowing back into the gate and damaging the FET or the circuit. The diode has a voltage drop of about 0.4V when it\'s in forward mode, meaning that there is a minimum voltage of 0.4V required for the FET to switch on.
Overall, the DMP2104LP-7 FET is an advanced and efficient FET that is suitable for many different applications. Its ultra-low RDS(on) allows it to be used in applications where low power is required, its low-threshold voltage allows it to control high-speed switching, and its integrated parasitic diode protection prevents current from flowing back into the gate and damaging the FET or the circuit.
Conclusion
In conclusion, the DMP2104LP-7 FET is an advanced and efficient field effect transistor that is suitable for many different applications. It has an ultra-low RDS(on) and low-power consumption, as well as an integrated diode protection that prevents current from flowing back into the gate. This makes it an ideal choice for applications where low power and high-speed switching are needed.
The specific data is subject to PDF, and the above content is for reference
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