Allicdata Part #: | IRL1104LPBF-ND |
Manufacturer Part#: |
IRL1104LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 104A TO-262 |
More Detail: | N-Channel 40V 104A (Tc) 2.4W (Ta), 167W (Tc) Throu... |
DataSheet: | IRL1104LPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3445pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 62A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 104A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL1104LPBF is a 60V single N-Channel MOSFET which comes in the hermetically sealed leadless ceramic flat package. It is manufactured by Renesas Technology Corp and is available in a 4-pin package. It has low gate charge and low thermal resistance, making it suitable for a wide range of applications.
Application field
The IRL1104LPBF is an ideal choice for applications in power management, motor drivers, and switch-mode power supplies. It is widely used in AC/DC switching circuits in which a high current needs to be switched, such as electric motor and fan control, power switches, and automated test equipment. This MOSFET also finds application in various other circuits such as LED drivers, voltage regulators, and variable speed motor controllers.
Working Principle
The MOSFET operates on the principle of a metal-oxide semiconductor field effect transistor (MOSFET). The IRL1104LPBF consists of two pairs of electrodes, the gate and the source, placed between a dielectric and a metal oxide, typically SiO2. When the gate electrode is positively biased, the current flows from the source to the drain. To decrease the current from the source to the drain, the gate electrode is negatively biased. In the IRL1104LPBF, the gate oxide is made of an inherently reliable SiO2 substrate layer which makes it capable of continuous drain-source voltage of up to 60V.
In the IRL1104LPBF, the gate oxide layer is formed with a very thin epi-planar structure. This optimizes the electrical characteristics by reducing gate charge and improving the switching speed. The ultra-thin gate oxide design is also enabled by utilizing low injection doping process technology. This allows the device to operate at very high speeds while achieving high output current.
The MOSFET has an enhanced high-temperature operation capability up to 150°C. This is due to the use of an optimized power-dissipation material which minimizes the self-heating effect and has a high thermal resistance. This allows for a more robust operation even in extreme temperatures.
In addition, the IRL1104LPBF also includes several inherent over-current protection features such as thermal shut-down, current limit, and reverse current protection. These features make the device suitable for automotive applications, as they ensure a higher levels of safety.
Overall, the IRL1104LPBF is a robust device that is suitable for various applications where high current needs to be switched. It has low gate charge, low thermal resistance, and high-temperature operation capability which makes it an ideal choice for power management, motor drivers, switch-mode power supplies, AC/DC switching circuits, LED drivers, voltage regulators, and variable speed motor controllers.
The specific data is subject to PDF, and the above content is for reference
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