![SI7868ADP-T1-GE3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | SI7868ADP-T1-GE3-ND |
Manufacturer Part#: |
SI7868ADP-T1-GE3 |
Price: | $ 1.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 40A PPAK SO-8 |
More Detail: | N-Channel 20V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 1.56101 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.4W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6110pF @ 10V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.25 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7868ADP-T1-GE3 is a N-channel PowerTrench MOSFET, which is commonly used in different audio and power applications. This is a special type of MOSFET due to its excellent on-resistance-to-size ratio. The SI7868ADP-T1-GE3 is a high voltage and high frequency MOSFET, meaning that it can be used in high powered applications where stability and frequency is a key factor.
The device is available in a three pin form factor and is mainly used as a linear amplifier or low-voltage switching application. Its wide drain current capability of 78A and its low RDS (on) of 0.0030 ohm makes this MOSFET an ideal candidate for such applications. The device also has high input capacitance, low gate charge and low input and output capacitance.
The main application of this MOSFET is high voltage audio amps, switching regulators, switching converters and power supply applications. For audio amplifiers, the device can be used as a linear amplifier, which offers excellent linearity and low distortion. It can be used as a switching regulator for power supply applications, as its low RDS (on) minimizes the power losses associated with switching. In addition to this, the high input capacitance of the MOSFET minimizes the risk of voltage drops and other types of disturbances.
The working principle of this type of MOSFET is simple. The device is a three-terminal transistor, which consists of a gate, drain and source. The gate, which is where the current is applied, is located between the drain and source. When a positive voltage is applied to the gate, the voltage between the drain and source is increased, thus allowing current to flow between the two. This, in turn, allows the MOSFET to be used as an amplifier or a switch, depending on the application.
In conclusion, the SI7868ADP-T1-GE3 is an excellent device for high voltage and high frequency applications such as audio amplifiers, switching regulators and power supply applications. Its excellent on-resistance-to-size ratio, low RDS (on) and high input capacitance make it an ideal choice for such applications.
The specific data is subject to PDF, and the above content is for reference
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