NVMFS6B03NWFT1G

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NVMFS6B03NWFT1G is a type of single N- & P-channel logic level field-effect transistor (FET) manufactured by STMicroelectronics with an industry-standard small footprint (1.5 mm x 1.2 mm) and low-profile SMD 2x3 leadless package. It classifies as a discrete FET and is used for commercial and consumer applications such as batteries, USB ports, cell phones and power management.

NVMFS6B03NWFT1G is a dual-channel logic level MOSFET featuring a small (1.5mm x 1.2mm) footprint, low-profile SMD 2x3 leadless package and excellent thermal and electrical performance. The device has a P-channel, N-channel and a logic-level gate suitable for high-end consumer and commercial electronic applications such as laptop battery chargers, USB ports, consumer tablets, power management and switching applications.

The NVMFS6B03NWFT1G is a single device made up of two logic-level MOSFET transistors, each with its own P-channel and N-channel. These are connected in parallel between the Source and the Drain and in series between the Gate and the Source. Thanks to its switching capabilities, new designs get the benefits of size reduction and no thermal or power management problems.

The device primarily operates upon the principle of MOSFET technology, where the gate acts as a switch between the source and the drain, controlling the current flow. When the control voltage (VGS) is between the threshold voltage (VGSth) and the drain/source voltage (VDS), the device is in the linear region and functions as an amplifier. As VDS moves higher than VGSth, the channel is turned on, allowing the flow of current from the source to the drain.

In terms of application field, NVMFS6B03NWFT1G is suitable for switching application in industrial and consumer electronic products. It can be used for high-side and low-side switching applications and are suitable for on-board and automotive components where a low on-resistance and low-profile surface-mount package is desired. Due to its small size, the device is ideally suited for automotive and industrial power systems, where size and weight are main concerns.

NVMFS6B03NWFT1G also offers a wide maximum VDS rating of 20V and a high peak current rating of 4.5A, with an on-resistance of 0.47Ω. Furthermore, the device offers low switching losses, low RDS(on)-temperature drift and fast switching speeds. It is also compatible with existing gate drivers and requires no external components for operation.

In summary, the NVMFS6B03NWFT1G is a single logic level FET device from STMicroelectronics, featuring a small footprint and excellent thermal and electrical performances. It is designed for a wide range of consumer and commercial applications, such as laptop battery chargers, USB ports, consumer tablets, and power management and switching applications. The principle of operation of the device is based on MOSFET technology, and it offers a wide maximum VDS rating of 20V and a high peak current rating of 4.5A, with low switching losses and fast switching speeds.

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