Allicdata Part #: | IPI100N06S3L-03IN-ND |
Manufacturer Part#: |
IPI100N06S3L-03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 100A TO-262 |
More Detail: | N-Channel 55V 100A (Tc) 300W (Tc) Through Hole PG-... |
DataSheet: | IPI100N06S3L-03 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 230µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 26240pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 550nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPI100N06S3L-03 is a Field Effect Transistor (FET) that belongs to the single MOSFET family. While FETs are considered to be superior to Bipolar Junction Transistors (BJTs) due to their greater efficiency, MOSFETs are the most popular type of FET due to their ability to operate with either positive or negative voltage signals. Specifically, this device is used primarily in power switching applications.
The IPI100N06S3L-03 acts as a switch, making it a great option for controlling a wide range of loads. It has the ability to control current and power in electronic circuits with a very low on-resistance — meaning it has a low operating power loss and is highly energy efficient. This makes it an ideal choice for applications that require high levels of efficiency or involve powering multiple loads.
Mechanically, the IPI100N06S3L-03 is composed of a silicon substrate with a source, gate, and drain terminal. The source supplies the source current, while the gate and drain act as a switch. Depending on its voltage signal input, the current can either be “on” or “off”, enabling the control of both current and power.
It is possible to operate the device on AC and DC loads. When operated in an AC circuit, the device will support bidirectional operation, allowing the current to flow in both directions. This is due to the absence of a body diode, which is what typically prevents AC operation. This makes the IPI100N06S3L-03 suitable for a wide range of power switching applications.
In terms of its operational characteristics, the device offers a high blocking voltage of 52V and blocking current of 100A. This makes it able to withstand large voltage and current thrashes, making it suitable for applications that require high voltage operation, such as motor control or high wattage power supplies.
The device also offers a very low on-state resistance approximately 47 Ω when conducting at 25C, which is great for applications that require long runs with low switching losses. This can help ensure the device operates efficiently, saving energy and also helping to protect components against over-current or over-voltage damage.
Due to its features and advantages, the IPI100N06S3L-03 is an ideal device for a wide range of applications, ranging from motor controls to power supply units and intelligent modules.
In summary, the IPI100N06S3L-03 is a Field Effect Transistor that belongs to the single MOSFET device family. This device offers a high blocking voltage of 52V, a blocking current of 100A, and a low on-state resistance of 47Ω, making it a great choice for applications that require high voltage operation, long runs with low switching losses, and efficient energy management. All of these features make the IPI100N06S3L-03 a great solution for motor controller, power supply units, and many other power switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPI100N06S3-03 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 100A I2PA... |
IPI100N06S3-04 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 100A TO-2... |
IPI100N06S3L-03 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 100A TO-2... |
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IPI100N04S303AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 100A TO26... |
IPI100N08N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 70A TO262... |
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IPI139N08N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 45A TO262... |
IPI16CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 53A TO26... |
IPI16CNE8N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 85V 53A TO262... |
IPI120N06S402AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPI120N06S403AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPI120N06S4H1AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPI126N10N3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 58A TO26... |
IPI100N04S4H2AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 100A TO26... |
IPI120N06S402AKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPI120P04P404AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
IPI120P04P4L03AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
IPI11N60C3AAKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH I2PAK |
IPI120N06S403AKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO262-3N-Chan... |
IPI120N06S4H1AKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO262-3N-Chan... |
IPI120N04S4-01M | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO262-3 |
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IPI120N08S404AKSA1 | Infineon Tec... | 1.32 $ | 1000 | MOSFET N-CH TO262-3N-Chan... |
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