| Allicdata Part #: | SIR638DP-T1-RE3-ND |
| Manufacturer Part#: |
SIR638DP-T1-RE3 |
| Price: | $ 0.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V 100A POWERPAKSO |
| More Detail: | N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount Po... |
| DataSheet: | SIR638DP-T1-RE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.56000 |
| 10 +: | $ 0.54320 |
| 100 +: | $ 0.53200 |
| 1000 +: | $ 0.52080 |
| 10000 +: | $ 0.50400 |
| Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10500pF @ 20V |
| Vgs (Max): | +20V, -16V |
| Gate Charge (Qg) (Max) @ Vgs: | 204nC @ 10V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 0.88 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SIR638DP-T1-RE3 transistor belongs to a family of field-effect transistors known as MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors). It is a single transistor that can switch up to a nominal voltage of 40 V (VDSS) and is capable of dissipating up to 1 W (Ptot).
SIR638DP-T1-RE3 transistors have a number of uses in electronic circuits. They are used to control current in a variety of electronics, including as switches in microcontrollers and as drivers in motor controllers. Additionally, they are used in power supplies, switch-mode power supplies, audio amplifiers, and numerous other power apparatus.
The basic working principle of the SIR638DP-T1-RE3 is analogous to that of a conventional MOSFET. It contains a gate terminal, source terminal, and drain terminal, and is operated by the application of voltage to the gate terminal. When the gate voltage is increased, the channel between the source and drain terminals becomes very thin, allowing current to flow freely between them. When the gate voltage is decreased, the channel closes again and the current flow is stopped.
The SIR638DP-T1-RE3 makes use of several technologies for improved performance, including thin-LVT (low-voltage threshold) technology. This allows for the operation of the transistor at lower gate voltages for improved power consumption. Additionally, the SIR638DP-T1-RE3 has a low RDS(on) rating, which is the measure of resistance between the drain and source terminals when the transistor is in an “on” state.
The SIR638DP-T1-RE3 also employs advanced technologies such as over-voltage protection, cycle-by-cycle over-current protection, over-temperature protection, voltage clamping, and various fault protection mechanisms. These features help to ensure the safe operation and reliability of the device in a range of applications.
In summary, the SIR638DP-T1-RE3 is a single, field-effect MOSFET transistor with a maximum operating voltage of 40 V, capable of dissipating up to 1 W. It is commonly used for switching, motor control, and general power management applications, and makes use of thin-LVT and other advanced technologies for improved performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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SIR638DP-T1-RE3 Datasheet/PDF